Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Nanoscale Silicon Prepared on Different Substrates Using Electron-Beam Evaporation and Their Field-Emission Property

Ultrafast growth of single-crystalline Si nanowires

High-vacuum Electron-Beam Co-Evaporation of Si Nanocrystals Embedded in Al2O3 Matrix

Silicon Nano-Wires Fabricated by Thermal Evaporation of Silicon Wafer

One-dimensional Silicon Nanostructures Fabricated by Thermal Evaporation

The Synthesization of Si Nanocrystals Embedded in HfO2 Matrix by Electron Beam Co-Evaporation Technique

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Silicon nanowires fabricated by thermal evaporation of silicon monoxide

Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Sulfide-assisted Growth of Silicon Nano-Wires by Thermal Evaporation of Sulfur Powders

Hydrofluoric Acid Free Synthesis of Macropores on Silicon by Chemical Vapor Deposition and Their Photoluminescence

Silicon Nanowires Prepared by Electron Beam Evaporation in Ultrahigh Vacuum

Electron Field Emission from Silicon Nanowires

Effects of Substrates on Silicon Oxide Nanowires Growth by Thermal Chemical Vapor Deposition

Vacuum Electron-Beam Evaporation of Fe Nanocrystals on Si 3 N 4 Buffer Layer for Carbon Nanotube Growth

Electron beam induced deposition of silicon nanostructures from a liquid phase precursor

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays