Leakage current characteristics of (Ba0.65Sr0.35)TiO3 thin films with Pt electrodes

Xiao-xiang HE,Chuan-gui WU,Wan-li ZHANG

DOI: https://doi.org/10.3321/j.issn:1001-9731.2008.08.019

2008-01-01

Abstract:150nm-(Ba_(0.65)Sr_(0.35))TiO_3(BST)thin films were deposited by RF sputtering on Pt/Ti/SiO_2/Si sub- strates.Under negative voltage,leakage current in BST films is governed by Schottky emission.The conduc- tion current in BST films fellows space-charge-limited current(SCLC)with traps under positive voltage,be- cause of high interface state density at the BST/Pt interface.At low voltage,the J-V characteristics obey ohmic law,and the J increases with increasing T.The calculation shows that E_c-E_f=0.287eV,which indicates the trap energy level of oxygen vacancies E_t is deep trap energy level.At high voltage,there is an enormously steep current rise,and the leakage current decreases with increasing temperature(PTCR effect).According to deep trapped space-charge-limited current model,the PTCR effect is determined byε_r(T)and V~((T_c/T)+1),andε_r(T) dominates the PTCR effect.