Dielectric behaviors of Nb2O5–Co2O3 doped BaTiO3–Bi(Mg1/2Ti1/2)O3 ceramics

Bo Xiong,Hua Hao,Shujun Zhang,Hanxing Liu,Minghe Cao,Zhiyong Yu
DOI: https://doi.org/10.1016/j.ceramint.2011.04.046
IF: 5.532
2012-01-01
Ceramics International
Abstract:Nb2O5 and Nb–Co doped 0.85BaTiO3–0.15Bi(Mg1/2Ti1/2)O3 (0.85BT–0.15BMT) ceramics were investigated. From XRD patterns, undesired phase was observed when the (Nb2O5/Nb-Co) doping levels exceed 3wt.%/2wt.%, giving rise to the deteriorate dielectric constant. The 0.85BT–0.15BMT ceramics doped with 2wt.%Nb2O5 was found to possess a moderate dielectric constant (ɛ∼1000) and low dielectric loss (tanδ=0.9%) at room temperature and 1kHz, showing flat dielectric behavior over the temperature range from −55 to 155°C. It was found that the formation of core–shell structure in the BT based ceramics is controlled by the doping sequence of Nb- and Bi-oxides.
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