The influences of rapid growth of yttria-stabilized ZrO_2 buffer layers for YBCO coated conductors

Feng Xiao,Xiong Jie,Zhang Fei,Xia Yudong,Zhao Xiaohui,Tao Bowan
DOI: https://doi.org/10.3969/j.issn.1001-7100.2012.02.005
2012-01-01
Abstract:Direct current(dc) reactive sputtering is one of the most promising approaches for fabricating yttria-stabilized ZrO2(YSZ) buffer layers.In this paper,YSZ films were deposited on Y2O3-buffered Ni 5at.%W substrates with Zr target embedded with yttrium discs.The influences of the growth temperature and rolling speed were investigated detailedly.X-ray diffraction(XRD) measurement revealed that the YSZ films were preferential(002) orientation at 700℃.Atomic force microscopy(AFM) analysis indicated that the surface was smooth with few pores and crack free.The films prepared with different rolling speed were all c-axis oriented,however,their RMS and grain size were different.Rapid growth could restrain the oxidation of the substrates surface,improve the textures and enhance the fabricating efficiency.
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