Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model in metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression, Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-mum effective gate length and the accuracy of the model are demonstrated.

A Charge Sheet Model for Mosfets with an Abrupt Retrograde Channel - Part I. Drain Current and Body Charge

A charge sheet model for MOSFETs with an abrupt retrograde channel Part II. Charges and intrinsic capacitances

Non-charge-sheet analytic model for ideal retrograde doping MOSFETs

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

A charge-based compact model for arbitrary doped cylindrical surrounding-gate MOSFETs

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

A noncharge-sheet channel potential and drain current model for dynamic-depletion silicon-on-insulator metal-oxide-semiconductor field-effect transistors

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach.

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

An analytic channel potential based model for dynamic depletion surrounding-gate mosfets with arbitrary doping level

A unified charge-based model for SOI MOSFETs valid from intrinsic to heavily doped channel

Analytical Model for High Current Density Trench Gate Mosfet

A Fully Analytical Current Model for Tunnel Field-Effect Transistors Considering the Effects of Source Depletion and Channel Charges

An Analytical Charge Model for Double-Gate Tunnel FETs

Comparison and insight into long-channel MOSFET drain current models

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution

Analytical Charge-Control and I-V Model for Submicrometer and Deep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets