Abstract:Silicon and germanium are waveguide core materials for Si-based Group-IV integrated photonic circuit applications in the mid-infrared (MIR) wavelength range defined here as 2 to 15 um. In particular, Si and Ge are transparent up to 8 and 15 μm respectively, thus offering applications in communications and the sensing of biochemical, medical, and environmental variables [1]. The major problem with the MIR transition is that the most dominant platform of SOI can be used only up to 4 μm due to the high absorption loss of silicon dioxide. Therefore alternative material platforms have to be utilized for longer wavelengths. Presently, the Ge-on-Si platform (known as GOS) has been demonstrated to be workable to 15 μm-thereby offering potential for MIR applications. However, the refractive index contrast between Ge (n=4.1) and Si (n=3.4) is considerably less than that of SOI. As a result, the bend radii in GOS must be considerably larger than those in SOI, causing the footprint of GOS on-chip sensor circuits to be generally larger than those of SOI, an unwanted increase in “real estate.” What is wanted is a better alternative Ge-waveguide platform that will provide a larger core-clad index contrast than GOS as well as useful transparency and smaller channel-bend radii. To achieve those goals, the new structure proposed and realized here is Germanium on Silicon Nitride (Ge-on-Si3N4) which is referred-to here as GON. The refractive index of silicon nitride is 2.4 and it is transparent up to ~7 μm. So the index contrast in GON is 1.7 compared to 0.7 in GOS. Our simulation results show that this structure can provide a more compact integrated network whose bend radii are only a few μm. Most importantly, we have developed a new and practical wafer bonding and layer transfer technique, reported here, to realize GON.

Different Index Contrast Silica-on-silicon Waveguides by PECVD

Comparison of Fiber-to-Waveguide Couplers in Point Diffraction Interferometer Based on Waveguide Reference Wavefront Source

Rib and strip chalcogenide waveguides based on Ge-Sb-Se radio-frequency sputtered films

Fabrication of Si/Si1-Xgex Waveguide Wdm Components

PECVD Deposition and Characterization of Thick Silica Film for Optical Waveguide

Low Propagation Loss Ge-on-Si Waveguides and Their Dependency on Processing Methods

Germanium-On-Silicon Nitride Waveguides for Mid-Infrared Integrated Photonics

Silicon-on-Insulator Waveguide Devices for Broadband Mid-Infrared Photonics

Design and Optimization of A Silica Waveguide Based Visible Etched Diffraction Grating with Uniform Loss

A Universal Approach to High-Index-Contrast Flexible Integrated Photonics

High-efficiency Apodized-Imaging Chip-Fiber Grating Coupler for Silicon Nitride Waveguides

Experimental Demonstration of an Apodized-Imaging Chip-Fiber Grating Coupler for Si_3N_4 Waveguides

Modeling and Fabrication of Ge-on-Si3N4 for Low Bend-Loss Waveguides

Study of Silicon-on-glass Waveguides

Void-Filling and Loss Reduction in PECVD Silica Waveguide Devices Using Boron–Germanium Codoped Upper Cladding

Analysis of deep-etched, single-mode GaAs/GaAlAs optical rib waveguides using discrete spectral index method

Design and fabrication of 1 × 32 silica-based arrayed waveguide grating

Single-mode-fiber-matched waveguide by silver/sodium ion-exchange and field-assisted ion-diffusion

Sub-micrometer-thick and Low-Loss Ge20Sb15Se65 Rib Waveguides for Nonlinear Optical Devices

Laser Annealing of SiO2 Film Deposited by ICPECVD for Fabrication of Silicon Based Low Loss Waveguide

Visible to Near-Infrared Light Integrated Photonic Components on PECVD and LPCVD SiN Platform