Abstract:A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS Si/SiC LDMOS) is proposed in this paper for the first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on Si/SiC MOSFETs. This creative technology improved Breakdown Voltage (BV) of the proposed device, compared with the conventional Si LDMOS (Cov. LDMOS). In order to optimize the trade-off between BV and Specific On-Resistance ( $text{R}_{mathrm{ ON,SP}}$ ), the SIPOS field plate is applied on Si/SiC LDMOS for the first time in this paper. At On-State, due to the internal electric field of SIPOS filed plate, the majority carriers accumulation layer is formed on the surface of the drift region for the proposed SIPOS Si/SiC LDMOS, which means $text{R}_{ON,SP}$ will be reduced. Meanwhile, the electric field modulation effect of SIPOS field plate can make the surface electric field distribute evenly, which leads to an increase of BV. In addition, due to the high-thermal conductivity of SiC substrate, the heat-dissipation efficiency of the proposed device is significantly improved. The simulation results show that the BV of SIPOS Si/SiC LDMOS is 428.4V, which increased by 78.4% in comparison with Cov. LDMOS (BV of 240.0V) with the same structure parameters. The $text{R}_{mathrm{ ON,SP}}$ of SIPOS Si/SiC LDMOS is decreased from $33.2{mathrm{ m}}Omega cdot {mathrm{ cm}}^{2}$ of Cov. LDMOS to $24.0{mathrm{ m}}Omega cdot {mathrm{ cm}}^{2}$ , decreased by 27.7%. Fu-thermore, the figure-of-merit (FOM = BV<sup>2</sup>/ $text{R}_{mathrm{ on,sp}}$ ) of SIPOS Si/SiC LDMOS reaches 7.6MW/cm<sup>2</sup>, which means SIPOS Si/SiC LDMOS has enough performance to break the Silicon limit.

High-Voltage SOI SJ-LDMOS with a Nondepletion Compensation Layer

A Novel RESURF LDMOS with Embedded CB-layer

Simulation for a Novel Vertical SOI Configuration

Design and optimization of a novel SOI LDMOS structure using PIN junction

Super Junction Lateral Double-Diffused MOSFET with Ultra-low Specific on-Resistance Completely Eliminating Substrate Assisted Depletion Effect

Realization of 850 v breakdown voltage LDMOS on Simbond SOI

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

A New 600V Partial SOI LDMOS with Step-Doped Drift Region

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

High Performance Junctionless FDSOI SiGe Channel P-Finfet with High ION/IOFF Ratio and Excellent SS

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

A Superjunction Extended Triple Gate LDMOS with Charge Accumulation Effect

Ultra-Fast Ligbts And Superjunction Devices In Membrane Technology

Lateral Unbalanced Super Junction (Usj)/3d-Resurf for High Breakdown Voltage on Soi

Novel Self-Modulated Lateral Superjunction Device Suppressing the Inherent 3-D JFET Effect

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

Novel Si/SiC Heterojunction Lateral Double-Diffused Metal Oxide Semiconductor With SIPOS Field Plate by Simulation Study

Lateral IGBT in thin SOI process for high voltage ESD application