Abstract:The control of the performance of single-walled carbon nanotube (SWCNT) random network-based transistors is of critical importance for their applications in electronic devices, such as complementary metal oxide semiconducting (CMOS)-based logics. In ambient conditions, SWCNTs are heavily p-doped by the H2O/O2 redox couple, and most doping processes have to counteract this effect, which usually leads to broadened hysteresis and poor stability. In this work, we coated an SWCNT network with various common polymers and compared their thin-film transistors' (TFTs') performance in a nitrogen-filled glove box. It was found that all polymer coatings will decrease the hysteresis of these transistors due to the partial removal of charge trapping sites and also provide the stable control of the doping level of the SWCNT network. Counter-intuitively, polymers with electron-withdrawing functional groups lead to a dramatically enhanced n-branch in their transfer curve. Specifically, SWCNT TFTs with poly (vinylidene fluoride) coating show an n-type mobility up to 61 cm2/Vs, with a decent on/off ratio and small hysteresis. The inverters constructed by connecting two ambipolar TFTs demonstrate high gain but with certain voltage loss. P-type or n-type doping from polymer coating layers could suppress unnecessary n- or p-branches, shift the threshold voltage and optimize the performance of these inverters to realize rail-to-rail switching. Similar devices also demonstrate interesting antiambipolar performance with tunable on and off voltage when tested in a different configuration.

Chemically induced air- stable unipolar-to-ambipolar conversion of carbon nanotube field effect transistors

Transformation of unipolar single-walled carbon nanotube field effect transistors to ambipolar induced by polystyrene nanosphere assembly.

Polymer Coating Enabled Carrier Modulation for Single-Walled Carbon Nanotube Network Inverters and Antiambipolar Transistors

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films

Hf-Contacted High-Performance Air-Stable N-Type Carbon Nanotube Transistors

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

Charge Transfer Induced Polarity Switching in Carbon Nanotube Transistors

Air-stable n-type transistors based on assembled aligned carbon nanotube arrays and their application in complementary metal-oxide-semiconductor electronics

Nanotube and Nanowire Transistors

Ab Initio Modeling of Ecosystems with Artificial Life

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Fabrication of air-stable n-type carbon nanotube thin-film transistors on flexible substrates using bilayer dielectrics

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.

Capability Of Charge Signal Conversion And Transmission By Water Chains Confined Inside Y-Shaped Carbon Nanotubes

Piperidine Induced Polarity Conversion in Single-Walled Carbon Nanotube Field Effect Transistors

Unipolar P-Type Single-Walled Carbon Nanotube Field-Effect Transistors Using TTF–TCNQ As the Contact Material

Directing and Sensing Changes in Molecular Conformation on Individual Carbon Nanotube Field Effect Transistors.

Field-effect transistors assembled from functionalized carbon nanotubes

Charge transfer at carbon nanotube-graphene van der Waals heterojunctions.

Adjustable Hydrazine Modulation of Single-Wall Carbon Nanotube Network Field Effect Transistors from P-Type to N-Type