TiO2−x Films Prepared by Ion Beam Assisted Deposition
CR Li,ZH Zheng,FM Zhang,SQ Yang,HM Wang,LZ Chen,F Zhang,XH Wang,XH Liu
DOI: https://doi.org/10.1016/s0168-583x(00)00010-0
2000-01-01
Abstract:TiO2−x films were prepared by ion beam assisted deposition on an EATON Z-200 system, during which concurrent electron beam evaporation of titanium and bombardment with an inert gas ion beam were carried out in an O2 atmosphere. Xe+ and Ne+ ions with different current density and incident angles were used. The films were investigated using X-ray diffraction (XRD), glancing incident X-ray diffraction (GIXRD), X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectroscopy (RBS). RBS analysis shows that the films are nearly stoichiometric. XPS measurements reveal that the surface was fully oxidized, but Ti2+, Ti3+ and Ti4+ coexist on the Ar+-sputtered surface. XRD and GIXRD analyses show that almost all the films have rutile-type structure and (200) preferred orientation. After annealing the 2θ angle shift to higher degrees and the (200) peak intensity increases, which means better crystallization and orientation.