Abstract:Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

Phase-Change Memory Devices Operative at 100 $^{\circ} \Hbox{c}$

Materials For Phase-Change Memory With Elevated Temperature Stability

Pt Modified Sb2Te3 Alloy Ensuring High−Performance Phase Change Memory

Toward the Speed Limit of Phase-Change Memory

Ga2te3 Phase Change Material For Low-Power Phase Change Memory Application

Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

Three Resistance States Achieved by Nanocrystalline Decomposition in Ge‐Ga‐Sb Compound for Multilevel Phase Change Memory

Interface controlled thermal resistances of ultra-thin chalcogenide-based phase change memory devices

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

The Phase Change Memory Features High-Temperature Characteristic Based on Ge-Sb-Se-Te Alloys

High thermal stability and fast operation speed phase-change memory devices containing Hf-doped Ge2Sb2Te5 films

Phase change memory based on Ta–Sb–Te alloy –Towards a universal memory

Engineering Grains of Ge2sb2te5 for Realizing Fast-Speed, Low-Power, and Low-Drift Phase-Change Memories with Further Multilevel Capabilities

Synthesis and characterization of phase change memory cells

Outstanding phase-change behaviors of GaGeSbTe material for phase-change memory application

Te-Free SiSb Phase Change Material for High Data Retention Phase Change Memory Application

Characteristics of Ga–Sb–Te Films for Phase-Change Memory

Ga<sub>2</sub>Te<sub>3</sub>Sb<sub>5</sub>-A Candidate for Fast and Ultralong Retention Phase-Change Memory

The Use of Ga16Sb84 Alloy for Electronic Phase-Change Memory

Understanding Phase-Change Behaviors of Carbon-Doped Ge2sb2te5 for Phase-Change Memory Application

Localization of Joule Heating in Phase-Change Memory With Incorporated Nanostructures and Nanolayer for Reducing Reset Current