A Fast and Provably Bounded Failure Analysis of Memory Circuits in High Dimensions.

Wei Wu,Fang Gong,Gengsheng Chen,Lei He
DOI: https://doi.org/10.1109/aspdac.2014.6742928
2014-01-01
Abstract:Memory circuits have become important components in today's IC designs which demands extremely high integration density and reliability under process variations. The most challenging task is how to accurately estimate the extremely small failure probability of memory circuits where the circuit failure is a "rare event". Classic importance sampling has been widely recognized to be inaccurate and unreliable in high dimensions. To address this issue, we propose a fast statistical analysis to estimate the probability of rare events in high dimensions and prove that the estimation is always bounded. This methodology has been successfully applied to the failure analysis of memory circuits with hundreds of variables, which was considered to be very intractable before. To the best of our knowledge, this is the first work that successfully solves high dimensional "rare event" problems without using expensive Monte Carlo and classic importance sampling methods. Experiments on a 54-dimensional SRAM cell circuit show that the proposed approach achieves 1150x speedup over Monte Carlo without compromising any accuracy. It also outperforms the classification based method (e.g., Statistical Blockade) by 204x and existing importance sampling method (e.g., Spherical Sampling) by 5x. On another 117-dimension circuit, the proposed approach yields 364x speedup over Monte Carlo while existing importance sampling methods completely fail to provide reasonable accuracy.
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