Abstract:Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) oxide crystal is a promising material for the use in fabrication of various optical components, and is an important substrate for magneto-optical films and high-temperature superconductors. The primary focus of GGG single crystal growth is to produce high quality and large size boules to satisfy such applications. A series of defects often emerge during the growth, such as hollow ingot, cracks, color center, dislocation and inclusions, which significantly degrade the crystal quality and limit the productivity. In this paper, numerical and theoretical analyses have been conducted to discuss the mechanisms of defect formation during the crystal growth. The hollow ingot, color center and inclusion are closely related to the complex reactions in the melt. The reaction products dissolve in the melt to be saturated, and then accumulate where the fluid flow is slow or stagnant. Therefore, the formation of the bubbles and inclusions is governed by the hydrodynamics of the melt. The relationship between the crystal rotation rate and the stagnant position is found to be linear. Crystal cracks and dislocation are related to thermal stress during the growth process. The locations in the crystal ingot with high possibility to crack or with large dislocation density can be evaluated by analyzing von Mises stress aligned in the direction supporting the maximum shear load. The submerged tube/ring designs are proposed for the adjustment of the melt flow structure by suppressing natural convection. The integrated solutions of melt convection and thermal stress are obtained to evaluate the feasibility of the proposed designs for the control of solute inclusions and thermal stress-related defects in the crystal.

Studies on the Growth and Defects of La3ga5sio14 (lgs) Crystals

Growth and Study on Defects of LSO:Ce Scintillation Crystal

Growth and Characterization of Piezoelectric Sr3Ga2Ge4O14 Crystals.

Growth and Macro-defects Study of Lu_2Si_2O_7:Ce Scintillation Crystal

Growth and Characterization of the La 3 Ga 4.85 Fe 0.15 SiO 14 Piezoelectric Single Crystal

Study on the Growth Defects of Γ-Lialo2 Crystal

Impurities related micro-defects in GaSb crystal grown by LEC method

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Optical and defect properties of mid-IR laser crystal Dy3+: PbGa2S4: a DFT and XPS study

Growth and Characterization of High Temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) Piezoelectric Single Crystals

Growth, Structure and Transmission Spectrum of A New Type Gysgg(Gdxy3-Xsc2ga3o12) Crystal

Growth, Defects, Mechanical and Optical Properties of Nd:GSAG and Nd:YSAG Laser Crystal

Analysis and optimization of Czochralski laser oxide crystal growth

Intrinsic Defects and the Inducing Conduction Mechanism of Langasite-Type High-Temperature Piezoelectric Crystals

Studies on the Growth and Defects of Gdca4o(Bo3)(3) Crystals

Growth of large langatate (La3Ta0.5Ga5.5O14, LTG) crystals with high electrical resistivity

Bridgman Growth of A Novel Piezoelectric Single-Crystal Material: Ca3nbga3si2o14

Bridgman Growth of Sr3NbGa3Si2O14 Single Crystal

Research on the Defects of PLZST Single Crystal Grown by Flux Method

Growth, Rietveld Refinement, Raman Spectrum and Dislocation of Ca2+/Mg2+/Zr4+-substituted GGG: a Potential Substrate and Laser Host Material

Bridgman growth of a novel piezoelectric single-crystal material: Ca 3NbGa3Si2O14