Growth and Characterization of High Temperature La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Ta0.5Ga5.3Al0.2O14 (LTGA) Piezoelectric Single Crystals

Shujun Zhang,Akira Yoshikawa,Kei Kamada,Eric Frantz,Ru Xia,David W. Snyder,Tsuguo Fukuda,Thomas R. Shrout
DOI: https://doi.org/10.1016/j.ssc.2008.08.013
IF: 1.934
2008-01-01
Solid State Communications
Abstract:La3Nb0.5Ga5.3Al0.2O14 (LNGA) and La3Nb0.5Ga5.3Al0.2O14 (LTGA) single crystals were grown using the Czochralski method. Piezoelectric properties of LNGA and LTGA single crystals were measured and compared to La3Ga5SiO14 (LGS) crystals, where the piezoelectric coefficient d(11) and electromechanical coupling factor k(12) were found to be on the order of 6-7 pC/N and similar to 16%, respectively. The resistivity of LNGA was found to be 1.1 x 10(8) Omega cm at 500 degrees C, much higher than those values of LTGA and LGS (similar to 2.2 x 10(7) Omega cm for LTGA and similar to 9 x 10(6) Omega cm for LGS). The RC time constant of LNGA crystal was found to be 224 mu s at 500 degrees C, while the values were 49 mu s and 18 mu s at the same temperature for LTGA and LGS, respectively. The good piezoelectric property, together with its high resistivity, exhibit LNGA single crystals a good candidate for piezoelectric applications at elevated temperature. (C) 2008 Elsevier Ltd. All rights reserved.
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