Effects of aluminum substitution on the structure and electric properties of langasite family crystals

Hiroaki Takeda,Jun‐ichi Yamaura,Takashi Nishida,Takuya Hoshina,Takaaki Tsurumi,Jun-ichi Yamaura
DOI: https://doi.org/10.1002/crat.201500261
2015-11-18
Crystal Research and Technology
Abstract:The effects of aluminum substitution on the structure and electric properties of langasite (La3Ga5SiO14) family crystals are reported. The maximum Al content x of La3Ga5‐xAlxSiO14 (LGAS), La3Nb0.5Ga5.5‐xAlxO14 (LNGA), and La3Ta0.5Ga5.5‐xAlxO14 (LTGA) crystals grown by the conventional Czochralski technique are x = 0.9, 0.2, and 0.5, respectively. Single‐crystal X‐ray structural analysis reveals that Al atoms are distributed in all cation sites except for the decahedral one occupied by La, rather than favoring the smallest tetrahedral sites. The electrical properties of the Al‐substituted crystals were also compared with those of pure ones. Al substitution was found to affect the piezoelectric constant d14, but not d11. The LGAS and LTGA crystals exhibit higher electric resistivity ρ as a result of Al substitution. Among the Al‐substituted and pure crystals, the LTGA crystal featured the lowest temperature dependence of d11 and highest ρ, making it the most suitable of the group for high‐temperature piezoelectric applications. In this study, Al substitution for Ga is applied to langasite family crystals: La3Ga5SiO14, La3Nb0.5Ga5.5O14, and La3Ta0.5Ga5.5O14. These Al‐substituted crystals all show a composition‐independent piezoelectric constant d11 and a higher electric resistivity compared to the pure crystals. Among them, the LTGA crystal possesses the lowest temperature dependence of d11, which is of great importance for future use in high‐temperature sensors.
crystallography
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