Abstract:GaN nanomaterials, as one of the most important third-generation semiconductor materials, have attracted wide attention. In this study, GaN nanowires with square cross section were successfully prepared by microwave plasma chemical vapor deposition system. The diameters of nanowires are from 300 to 500 nm and the lengths from 15 to 20 μm. The results show that the cross section of nanowires could be transformed from triangle into square by adjusting the ratio of Mg to Ga in source materials. X-ray diffraction(XRD)result indicate that the structure of GaN nanowires are agree with the hexagonal wurtzite. X-ray photoelectron spectroscopy (XPS) rusult show that a certain amount of Mg and O impurities incoporated in the square-shaped GaN nanowires. Transmission electron microscopy (TEM) result suggested that square-shaped GaN nanowires had high crystallinity with a growth direction of [\begin{document}$0\bar 110$\end{document}]. The ratio of source materials- and time-depented growth mechanism was also studied. It was suggested that the transformation of the cross section from triangle to square structure should be derived from the growth mechanism change from vapor-liquid-solid(VLS)process to vapor-solid(VS)process. The doped Mg increased the growth rate of the nanowires sidewalls, which led to a symmetrically growth of GaN nanowires along the twin boundaries. GaN nanowires gradually transformed to square structure by auto-catalytic growth. Moreover, the property of field emission were further investigated. The results showed that the turn-on electric field of square-shaped GaN nanowires was 5.2 V/m and a stable field emission property at high electric field. This research provides a new method for the preparation of square-shaped GaN nanowires and a prospective way for the design and fabrication of novel nano-scale devices.

Ordered Ga Wires Formed On Si(100)-2xn: Scanning Tunneling Microscopy Study

Step Bunching Formation On Gaas(001) Introduced By Surface Reconstruction

Array-orderly single crystalline silicon nano-wires

Study of Si and Ge growth on Si(100) surface

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Preparation, Doping Modulation and Field Emission Properties of Square-Shaped GaN Nanowires

Fabrication of GaAs Nanowires by Colloidal Lithography and Dry Etching

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide

Simple And High-Yield Method For Synthesizing Single-Crystal Gan Nanowires

Nanoscale Superconductivity of Γ-Ga Islands Grown by Molecular Beam Epitaxy

Phase Transition Induced Vertical Alignment of Ultrathin Gallium Phosphide Nanowire Arrays on Silicon by Chemical Beam Epitaxy

Fabrication and Photoluminescence of Ordered GaN Nanowire Arrays

Atomic structure of the Ge(001)-(7x5.5)-Ga surface

Unconventional Gallium Oxide Nanowires

Real structure of lattice matched GaAs-Fe3Si core-shell nanowires

Lattice-Directed Formation of Covalent and Organometallic Molecular Wires by Terminal Alkynes on Ag Surfaces.

Atomic‐Scale Investigation of the Lattice‐Asymmetry‐Driven Anisotropic Sublimation in GaN

Wafer-scale high-throughput ordered arrays of Si and Coaxial Si/Si 1- xGex wires: Fabrication, characterization, and photovoltaic application

Atomic Structure of the Domain Walls of the Discommensurate Phases in Ge(111)/Ga