In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering
J W Lee,K Eom,T R Paudel,B Wang,H Lu,H X Huyan,S Lindemann,S Ryu,H Lee,T H Kim,Y Yuan,J A Zorn,S Lei,W P Gao,T Tybell,V Gopalan,X Q Pan,A Gruverman,L Q Chen,E Y Tsymbal,C B Eom
DOI: https://doi.org/10.1038/s41467-021-26660-7
2021-11-22
Abstract:The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3 [Formula: see text] substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.