Abstract:Experimental studies of Zn1-xCoxO as thin films or nanocrystals have found ferromagnetism and Curie temperatures above room temperature and that p- or n-type doping of Zn1-xCoxO can change its magnetic state. Bulk Zn1-xCoxO with a low defect density and x in the range used in experimental thin film studies exhibits ferromagnetism only at very low temperatures. Therefore defects in thin film samples or nanocrystals may play an important role in promoting magnetic interactions between Co ions in Zn1-xCoxO. The electronic structures of Co substituted for Zn in ZnO, Zn and O vacancies, substituted N and interstitial Zn in ZnO were calculated using the B3LYP hybrid density functional in a supercell. The B3LYP functional predicts a band gap of 3.34 eV for bulk ZnO, close to the experimental value of 3.47 eV. Occupied minority spin Co 3d levels are at the top of the valence band and unoccupied levels lie above the conduction band minimum. Majority spin Co 3d levels hybridize strongly with bulk ZnO states. The neutral O vacancy and interstitial Zn are deep and shallow donors, respectively. The Zn vacancy is a deep acceptor and the acceptor level for substituted N is at mid gap. The possibility that p- or n-type dopants promote exchange coupling of Co ions was investigated by computing total energies of magnetic states of ZnO supercells containing two Co ions and an oxygen vacancy, substituted N or interstitial Zn in various charge states. The neutral N defect and the singly-positively charged O vacancy are the only defects which strongly promote ferromagnetic exchange coupling of Co ions at intermediate range.

H-Impurity Induced High-Temperature Ferromagnetism in Co-Doped Zno

Effect of Defects on Room-Temperature Ferromagnetism in Co and Na Co-Doped ZnO

Evidence Of The Defect-Induced Ferromagnetism In Na And Co Codoped Zno

Characterization of ZnO:Co particles prepared by hydrothermal method for room temperature magnetism

Enhanced Room Temperature Ferromagnetism in Co-Doped Zno Mediated by Interstitial H

Origin of Ferromagnetism in Zn-doped SnO2 from First-Principles Study

Ferromagnetism Induced by Defect Complex in Co-doped ZnO

The Role Of Zn Interstitials In Cobalt-Doped Zno Diluted Magnetic Semiconductors

High-Tc ferromagnetism in a Co-doped ZnO system dominated by the formation of a zinc-blende type Co-rich ZnCoO phase.

Zn vacancy induced ferromagnetism in K doped ZnO

Magnetism of Co-Doped Zno Epitaxially Grown on A Zno Substrate

Hydrogen Diffusion Behavior and Its Effect on Magnetic Properties in (mn, N)-Codoped Zno

Exciton quenching and ferromagnetism-to-ferrimagnetism crossover in diluted magnetic semiconducting Zn1-xCoxO nanogranular nanofibers

Room-Temperature Ferromagnetism in Co-Doped Zno Bulk Induced by Hydrogenation

Room-Temperature Ferromagnetism in Co-Doped Zno Fabricated by Coprecipitation Method

Grain boundary defects-mediated room temperature ferromagnetism in Co-doped ZnO film

The Magnetic Properties of Co-Doped Zno Diluted Magnetic Insulator Films Prepared by Direct Current Reactive Magnetron Co-Sputtering

Electron-induced Ferromagnetic Ordering of Co-doped ZnO

Donor Defects Enhanced Ferromagnetism in Co:Zno Films

Magnetic defects promote ferromagnetism in Zn1-xCoxO

O-vacancy-mediated Spin-Spin Interaction in Co-doped ZnO: First-principles Total-Energy Calculations