Interfacial Engineering of Cu 2 O Passivating Contact for Efficient Crystalline Silicon Solar Cells with an Al 2 O 3 Passivation Layer
Le Li,Guanlin Du,Xi Zhou,Yinyue Lin,Yuanwei Jiang,Xingyu Gao,Linfeng Lu,Gang Li,Wei Zhang,Qiang Feng,Jilei Wang,Liyou Yang,Dongdong Li
DOI: https://doi.org/10.1021/acsami.1c08258
2021-06-14
Abstract:Passivating contacts that simultaneously promote carrier selectivity and suppress surface recombination are considered as a promising trend in the crystalline silicon (<i>c</i>-Si) photovoltaic industry. In this work, efficient <i>p</i>-type <i>c</i>-Si (<i>p</i>-Si) solar cells with cuprous oxide (Cu<sub>2</sub>O) hole-selective contacts are demonstrated. The direct <i>p</i>-Si/Cu<sub>2</sub>O contact leads to a substoichiometric SiO<i><sub>x</sub></i> interlayer and diffusion of Cu into the silicon substrate, which would generate a deep-level impurity behaving as carrier recombination centers. An Al<sub>2</sub>O<sub>3</sub> layer is subsequently employed at the <i>p</i>-Si/Cu<sub>2</sub>O interface, which not only serves as a passivating and tunneling layer but also suppresses the redox reaction and Cu diffusion at the Si/Cu<sub>2</sub>O interface. In conjunction with the high work function of Au and the superior optical property of Ag, a power conversion efficiency up to 19.71% is achieved with a <i>p</i>-Si/Al<sub>2</sub>O<sub>3</sub>/Cu<sub>2</sub>O/Au/Ag rear contact. This work provides a strategy for reducing interfacial defects and lowering energy barrier height in passivating contact solar cells.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c08258?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c08258</a>.Experimental details, minority carrier lifetime, XRR spectra, UPS spectra, refractive index data, and Tauc plot (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c08258/suppl_file/am1c08258_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology