Abstract:The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch, thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we report the high quality and thin GaAs film grown on {113}-faceted Ge/Si (001) hollow substrate by in-situ hybrid molecular beam epitaxy. By directly growth of Ge on U-shape patterned Si (001), a strain-relaxed high-quality Ge sawtooth hollow structure with {113} facets was obtained. With an additional 400 nm GaAs deposition, an APD-free surface with a root-mean-square roughness of merely 0.67 nm is obtained on such Ge {113} /Si (001) substrate. The lattice mismatch dislocation between Ge and Si is found to terminate mostly at the sidewalls of the hollow structures. The {113}-faceted Ge surface is acting as an equivalent to the miscut substrate, which annihilates the APDs at the GaAs/Ge interface. High-resolution X-ray diffraction characterization reveals that the hollow structures can effectively reduce the thermal strain, leading to a crack-free GaAs film up to 7 µm. Five-layer InAs/GaAs quantum dots (QDs) on such virtual GaAs/Ge {113} /Si (001) substrate without any dislocation filter layers exhibits almost the same photoluminescence (PL) intensity as that on the GaAs substrate, providing a promising method for integrating III-V QD lasers with silicon photonic platform.

Liquid Phase Epitaxy of Al0.3Ga0.7As Islands

Changing Planar Thin Film Growth into Self-Assembled Island Formation by Adjusting Experimental Conditions

The Fabrication and Properties of Inas/Gaas Columnal Islands

Isotropic Growth Islands of Ga 0.16 in 0.84 As 0.80 Sb 0.20 Epilayer Grown by Metalorganic Chemical Vapour Deposition

Micro-fabricated Al0.3Ga0.7As Pyramids for Potential SPM Applications

Growth of Nano-Structures on Composition-Modulated Inalas Surfaces

Study of nucleation positions of InAs islands on stripe-patterned GaAs (100) substrate

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Selective Growth of InAs Islands on Patterned GaAs (100) Substrate

In-plan self-organized two-dimensional-ordered GeSi islands grown on Si[001] by molecular beam epitaxy

Electronic structures of uncapped In(Ga)As nanoislands grown on pit-patterned GaAs(001) substrate

Atomic Force Microscopy On The Ga0.16in0.84as0.80sb0.20 Epilayer Grown By Metalorganic Chemical Vapor Deposition

Spontaneously Ordered InAs Self-Assembled Quantum Dots Grown on GaAs/InP Substrate

Liquid Phase Epitaxial Growth Of Algainpas On Gaas Substrates

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

In situ asymmetric island sidewall growth of high-quality semipolar (112) GaN on m-plane sapphire

Strain-Induced Islands and Nanostructures Shape Transition'S Chronology on Inas (100) Surface

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Nanoscale Superconductivity of Γ-Ga Islands Grown by Molecular Beam Epitaxy