Lateral Field Emitters Fabricated Using Carbon Nanotubes
AS Teh,SB Lee,KBK Teo,M Chhowalla,WI Milne,DG Hasko,H Ahmed,GAJ Amaratunga
DOI: https://doi.org/10.1016/s0167-9317(03)00140-0
IF: 2.3
2003-01-01
Microelectronic Engineering
Abstract:We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler–Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices.