Abstract:To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

Spin Polarization and Electronic Structure of Ferromagnetic Mn5ge3 Epilayers

Structural, magnetic, and transport properties of polycrystalline Mn3Ga0.8Ge0.2 alloy

Investigating the strain controlled epitaxial growth of Mn 3 Ge films through thickness modulation

Half-metal Mn2GeI2 monolayer with high Curie temperature and large perpendicular magnetic anisotropy

Cubic Mn3Ge thin films stabilized through epitaxial growth as a candidate noncollinear antiferromagnet

{Spin polarization tuning in Mn$_{x}$Fe$_{1-x}$Ge$_{3}$

Manipulation of crystalline structure, magnetic performance, and topological feature in Mn 3 Ge films

Homoepitaxial Mn3Ge films on ultra-thin Fe seed layer with high perpendicular magnetic anisotropy

Structure, magnetic and magnetocaloric properties of the Mn5Ge3 thin film grown on Si(111)

Strain-induced Switching Between Noncollinear and Collinear Spin Configuration in Magnetic Mn5Ge3 Films

High-Curie-temperature ferromagnetism in self-organized Ge1−xMnx nanocolumns

Ferromagnetic Germanide in Ge Nanowire Transistors for Spintronics Application

Magnetic Mn-Doped Ge Nanostructures

Epitaxial growth and magnetic properties of Mn5(SixGe1-x)3 thin films

Microstructure and Ferromagnetism of Mn0.05Ge0.95 Quantum Dots/Graphene Heterostructures for Spintronic Devices

Minority-spin conduction in ferromagnetic Mn 5 Ge 3 C x and Mn 5 Si 3 C x films derived from anisotropic magnetoresistance and density functional theory

Tuning crystal orientation and chiral spin order in Mn3Ge by annealing process and ion implantation

Nearly perfect spin polarization of noncollinear antiferromagnets

Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas

Structural and Magnetic Properties of MBE-grown GeMnN2 Thin Films

Magnetotransport in ferromagnetic Fe$_2$Ge semimetallic thin films