Abstract:Aluminum nitride films have been prepared on Si (100) substrates through two methods: basic pulsed laser deposition from sintered aluminum nitride ceramics and plasma-aided reactive pulsed laser deposition from elemental aluminum metal. The latter was performed in a nitrogen plasma environment generated from electron cyclotron resonance microwave discharge. The films deposited by both methods have been characterized by various techniques to examine the morphology and to determine the composition and structure. The formation of aluminum nitride compound was confirmed in the deposited films. The films prepared by basic pulsed laser deposition are found to contain oxygen impurities, while those obtained through the plasma aided method have exhibited a stoichiometric AlN composition. The films have shown better crystalline quality when prepared at higher temperatures, however, when aided by the nitrogen plasma the films contain pure AlN compound with much better crystalline quality even prepared at low temperatures. Mechanisms relevant to the deposition processes are also discussed with particular emphasis on the contributions of the nitrogen plasma to the film formation. A comparison of the different characteristic features associated with the films prepared by the two methods shows that the plasma aided method has reasonable advantages in preparing compound films.

An aluminum oxynitride film

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Synthesis, microstructures and properties of γ-aluminum oxynitride

Preparation of Aln Films by Pulsed Laser Deposition Using Sintered Aluminum Nitride and Elemental Aluminum As Raw Materials

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition.

Review on Deposition of C-Axis Oriented AlN Films by Reactive Magnetron Sputtering

AlON transparent ceramics from powders synthesized by improved direct nitridation

Fabrication and Application of Nano-Porous Aluminum

Fabrication of Aln Thin Films on Different Substrates at Ambient Temperature

Preparation of transparent AlON from powders synthesized by novel CRN method

Reactive Partially Ionized Beam Deposition of Aln Thin Films

Optical properties of powder and ceramics of aluminium oxynitride obtained by self-propagating high-temperature synthesis

Investigation of the structural characteristics, dielectric properties, and infrared reflectivity spectra of AlON transparent ceramics

Synthesis, microstructures and properties of gamma-aluminum oxynitride

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Highly-transparent AlON ceramic fabricated by tape-casting and pressureless sintering method

Study of the AlON-VN Composite Ceramic

Microstructure and Electromagnetic Performance of the FeCoAlON Films Tuned by N2 Pressure During Reactive Pulsed Laser Deposition

Characterizations of NbAlO Thin Films Grown by Atomic Layer Deposition

Aln Thin Films Grown by Ion-Beam-Enhanced Deposition and Its Application to Soi Materials