Abstract:Accurate characterization of transistor noise performance is significant for low-noise amplifier (LNA) design. The conventional empirical noise model contains too many fitting parameters and thus relies on a large number of on-wafer noise measurements, especially the ambient temperature effects modeling. In this article, an improved noise modeling method using the quasi-physical zone division (QPZD) theory is proposed. The boundary potential calculation in the traditional modeling method is improved by considering the effects of the charge depletion region when the transistor is in the ON-state, which can result in at least two orders of magnitude improvement in the accuracy of the noise power spectral density (PSD). With this improvement, the noise performance can be accurately predicted without adding any fitting parameters in the noise PSD models. Furthermore, ambient temperature modeling of the noise performance is realized by considering the ambient temperature effects of drain–source current with a modified model and some other significant intrinsic parameters. Verification shows that the proposed QPZD noise model with the improved boundary potential calculation method can well predict the noise performance and scattering parameters at different ambient temperatures. The method of this study can be applied to physical-based noise modeling of GaN high-electron-mobility transistors (HEMTs) and LNA design.

An improved HEMT noise model for optical preamplifier design

Improved HEMT Device Noise Equivalent Circuit Model

A 2.5 Gb/s CMOS Low Noise Transimpedance Amplifier with Active Feedback

HEMT Noise Modeling for D Band Low Noise Amplifier Design

An improved noise model of InP HEMT for millimeter wave application

A Compact Model for Dual-Gate GaAs PHEMT and Application for Power Amplifier Design

An Improved Analytical Model of GaN HEMT in Cascode Configuration During Turn-on Transition

An Improved RF MOSFET Model Accounting Substrate Coupling among Terminals

An Improved Method for InP HEMT Noise-Parameter Determination Based on 50-Ω Noise Measurements

Noise Analysis of A Low Noise Charge Sensitive Preamplifier

An improved small‐signal model for GaN HEMTs devices

Reliable noise modeling of GaN HEMTs for designing low‐noise amplifiers

An Improved Noise Modeling Method Using a Quasi-Physical Zone Division Model for AlGaN/GaN HEMTs

An Improved Equivalent Circuit Model of Spoof Surface Plasmon Transmission Line

A distributed small signal equivalent circuit modeling method for InP HEMT

Enhanced GaN HEMT large-signal model with self-heating and trapping effects for power amplifier design

Comprehensive Design Considerations and Noise Modeling of Preamplifier for MEMS Electrometry.

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

A Gain-Flatness Optimization Solution for Feedback Technology of Wideband Low Noise Amplifiers

Model device parameters for a 10-Gb/s HEMT modulator driver IC

An Improved DC Model for AlGaN/GaN HEMTs