Miller Effect Analysis and Noise Optimization of CMOS Low Noise Amplifier
HUANG Xiao-hua,CHEN Li-jia,ZHOU Jin-fang,CHEN Kang-sheng
DOI: https://doi.org/10.3785/j.issn.1008-973x.2011.03.004
2012-01-01
Abstract:According to feedback decomposition theorem(FDT),the gate-drain capacitance of a transistor was decomposed into the input and output nodes.Then the influence of gate-drain capacitance on input impedance and noise figure of low noise amplifier(LNA) were discussed.Based on the analytic result,revised input matching and noise figure formulas were developed,also the noise optimization method under the constraint of power dissipation was proposed.The post-layout simulation results show that the 2.4 GHz LNA,based on SMIC 0.18 μm RF CMOS(Complementary Metal Oxide Semiconductor) technology,consumes a low DC power of 2.4 mW from a 1.2 V supply,noise figure of 1.0 dB,power gain of 16.3dB,input and output losses below-22 dB,and input third-order intercept point of-3.2 dBm.Compared with existing designs,the proposed 2.4 GHz LNA based on the revised formulas had lower power dissipation,better input impedance matching and lower noise factor.