0.18 dB Low-Noise Figure at 10 GHz for GaN MIS-HEMT With Plasma-Enhanced Atomic Layer Deposition SiN Layer
Xinyu Liu,Sheng Zhang,Ke Wei,Jiaqi Guo,Xiaoqiang He,Yichuan Zhang,Haibo Yin,Sen Huang,Xiaojuan Chen,Yingkui Zheng,Xinhua Wang,Sihua Ouyang,Yankui Li
DOI: https://doi.org/10.1109/led.2023.3282621
IF: 4.8157
2023-07-01
IEEE Electron Device Letters
Abstract:Investigation into the noise performance of GaN metal-insulator-semiconductor HEMT with 5-nm SiN dielectric layer has been performed in this work. The fabricated MIS-HEMT exhibits a minimum noise figure ( $NF_{\text {min}}{)}$ of 0.18 dB at 10 GHz and 0.45 dB at 18 GHz with a 10 V drain voltage and ~70 mA/mm drain current, which is considerably smaller than the corresponding values (1.0 dB and 1.9 dB respectively) obtained for the controlled HEMT. A corrected physical base noise model has been conducted to evaluate the improvement. The influence of the suppressed gate leakage current and reduced channel resistance on NF min is stronger than that of the parasitic capacitance, which finally contributes to a decreased NF min for MIS-HEMT. Moreover, the dependences of noise characteristics on the bias voltages are also monitored, achieving a tiny $NF_{\text {min}} < 0.8$ dB at 18 GHz with a 20 V drain bias. These findings sufficiently reveal the potential of GaN MIS-HEMT utilizing in low-noise amplifiers.
engineering, electrical & electronic