The Intrinsic Thermoreflectance Property of 4H-SiC
Yusa Chen,Yun Huang,Wen-Gang Wu,Yan Liu,Yuwei Zhai,Aihua Wu,Faguo Liang
DOI: https://doi.org/10.1007/s11664-021-09349-x
IF: 2.1
2021-12-01
Journal of Electronic Materials
Abstract:As the third-generation semiconductor material, silicon carbide (SiC), is extensively used in microelectronics devices. However, research on SiC in terms of thermoreflectance (TR) is relatively insufficient, so this paper aims to uncover the intrinsic TR property of 4H-SiC. In this paper, the light intensity values of 4H-SiC at different temperatures range from 40°C to 120°C; the temperature rise interval is 20°C, and different illumination wavelengths which range from 365 nm to 730 nm are measured by a self-made thermal reflectivity microscope. After linear fitting, the TR coefficients of 4H-SiC at different illumination wavelengths are obtained. The results have shown that when the wavelength of incident light is 365 nm, 4H-SiC has a larger TR coefficient, about 10−4K−1, while in the range of visible spectrum, the TR coefficient is small, between 10−5and 10−6K−1. The paper also gives a physics-mechanism-based explanation for this phenomenon. The findings provide a promising path for researchers to effectively measure the surface temperature of 4H-SiC-based microelectronic devices.
engineering, electrical & electronic,materials science, multidisciplinary,physics, applied