Abstract:For silicon carbide (SiC) processed by ion-implantation, dedicated test structure fabrication or destructive sample processing on test wafers are usually required to obtain depth profiles of electrical characteristics such as carrier concentration. In this study, a rapid and non-destructive approach for depth profiling is presented that uses confocal Raman microscopy. As an example, a 4H–SiC substrate with an epitaxial layer of several micrometers thick and top layer in nanoscale that was modified by ion-implantation was characterized. From the Raman depth profiling, longitudinal optical (LO) mode from the epitaxial layer and longitudinal optical phonon-plasmon coupled (LOPC) mode from the substrate layer can be sensitively distinguished at the interface. The position profile of the LOPC peak intensity in the depth direction was found to be effective in estimating the thickness of the epitaxial layer. For three kinds of epitaxial layer with thicknesses of 5.3 μm, 6 μm, and 7.5 μm, the average deviations of the Raman depth analysis were −1.7 μm, −1.2 μm, and −1.4 μm, respectively. Moreover, when moving the focal plane from the heavily doped sample (~1018 cm−3) to the epitaxial layer (~1016 cm−3), the LOPC peak showed a blue shift. The twice travel of the photon (excitation and collection) through the ion-implanted layer with doping concentrations higher than 1 × 1018 cm−3 led to a difference in the LOPC peak position for samples with the same epitaxial layer and substrate layer. Furthermore, the influences of the setup in terms of pinhole size and numerical aperture of objective lens on the depth profiling results were studied. Different from other research on Raman depth profiling, the 50× long working distance objective lens (50L× lens) was found more suitable than the 100× lens for the depth analysis 4H–SiC with a multi-layer structure.

Determination of the Transport Properties in 4H-Sic Wafers by Raman Scattering Measurement

Characterization of 4h—sic Substrates and Epilayers by Fourier Transform Infrared Reflectance Spectroscopy

Identification of Dominant Scattering Mechanism in Epitaxial Graphene on Sic

Temperature and Doping Dependence of the Raman Scattering in 4H-Sic

Phonon-limited carrier mobilities and Hall factors in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -SiC from first principles

Phonon-limited carrier mobilities and Hall factors in <i>4H-SiC</i> from first principles

Temperature dependence of Raman scattering in bulk 4H-SiC with different carrier concentration

Depth Profiling of Ion-Implanted 4H–SiC Using Confocal Raman Spectroscopy

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

Defects in epitaxial 4H-SiC revealed by exciton recombination

Study of Carrier Mobilities in 4H-SiC MOSFETS Using Hall Analysis

Electronic and Optical Properties of Threading Dislocations in n-Type 4H-SiC

Characterizations on the Doping of Single-Crystal Silicon Carbide

Measurements of dislocations in 4H-SiC with rocking curve imaging

Lattice Defects Distribution of H+ Implanted 4H-Sic Investigated by Deep-Ultraviolet Raman Spectroscopy

Infrared Reflectance Study of 3C-Sic Epilayers Grown on Silicon Substrates

Hall Mobility in N-Type 4H-Sic: Calculation Using Hydrodynamic Balance Equations

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Fast Homoepitaxial Growth of 4H-Sic Films on 4° Off-Axis Substrates in a SiH 4 -C 2 H 4 -H 2 System

Photoluminescence Study of Epitaxial 4H-Sic Grown on AlN/Si ( 100 ) Complex Substrate by Chemical Vapor Deposition