Abstract:Normally, nitrogen-polar (N-polar) GaN films with better crystalline quality tend to have poor surface morphology, whereas those with good surface morphology suffer from degraded crystalline quality. In this work, we use a two-step high-temperature (HT) growth method to grow N-polar GaN films on vicinal c-plane sapphire substrates by metalorganic chemical vapor deposition, which can effectively solve the irreconcilability between surface morphology and crystalline quality. The GaN film consists of two GaN layers (HT-GaN 1 and HT-GaN 2), which were grown at different growth parameters, respectively. The 300-nm-thick HT-GaN 1 layer was directly grown on the low-temperature GaN buffer layer under the higher V/III ratio and pressure at 1040 degrees C to reduce dislocation density. The 1.7-mu m-thick HT-GaN 2 layer was grown under the lower V/III ratio and pressure to improve surface morphology. Besides, the growth temperature of HT-GaN 2 layer was ramped up to 1070 degrees C to suppress the yellow-band luminescence. Finally, high-quality N-polar GaN films with smooth surface morphology and high crystalline quality were obtained, for which the full-width at half-maximum values of (0002) and (1012) planes X-ray diffraction rocking curves are 131 and 390 arcsec, respectively, the root mean square roughness over an area of 20 x 20 mu m2 is 1.88 nm, and the residual compressive stress is as low as 0.025 GPa. It is reasonably believed that this work provides an effective approach to preparing high-quality N-polar GaN films for the application of N-polar nitride devices.

Growth condition dependence of structure and surface morphology of GaN films on (111)GaAs substrates prepared by reactive sputtering

Effect of Nitrogen Pressure on the Properties of GaN Films Epitaxially Grown on AlN/Si by Pulsed Laser Deposition

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth temperature dependence of structural properties for single crystalline GaN films on MgAl<sub>2</sub>O<sub>4</sub> substrates by pulsed laser deposition

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Effects of Growth Temperature Modulated by HCl Flow Rate on the Surface and Crystal Qualities of Thick GaN by HVPE

Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Growth of GaN Films by Nitriding Ga2O3 Films Sputtered on the Ga-diffused Si(111)Substrate

Growth behavior of GaN film along non-polar [11–20] directions

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Gallium nitride deposition via magnetron sputtering: Linking plasma-surface interactions and thin film crystalline features

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal-Organic Chemical Vapor Deposition

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Two-dimensional X-ray diffraction and transmission electron microscopy study on the effect of magnetron sputtering atmosphere on GaN/SiC interface and gallium nitride thin film crystal structure

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2