Abstract:The quaternary alloy In0.48(Ga1−xAlx)0.52P, lattice-matched to GaAs, has a direct band gap transition in the wavelength range of green-red light and is useful in optoelectronic applications such as visible light emitting diodes and laser diodes. We have investigated a set of six nominal In0.48(Ga1−xAlx)0.52P layers that were grown on GaAs (001) by low pressure metalorganic chemical vapor deposition (MOCVD) turbo disk technology. In order to control and optimize the growth conditions to produce high quality InGaAlP epilayers, a variety of nondestructive techniques, including photoluminescence (PL), Raman scattering, photoreflectance (PR), reflectance anisotropy (RA) spectroscopy, atomic force microscopy (AFM), and high resolution x-ray diffraction (HRXRD) have been applied to evaluate the epitaxial films and growth processes. HRXRD confirmed a good lattice match between the epilayers and the substrate material. The PL and PR spectra showed the variations of the InGaAlP PL peak and the energy band with growth pressure and other parameters. Raman spectral line shape analysis leads to information about the sample crystalline quality. Polarization dependent PR and RA spectroscopy were used to detect the in-plane anisotropy of epitaxial materials. AFM was used to study the surface morphology of these quaternary compounds and to nondestructively detect any possible dislocations in these hetero-epitaxial materials. The optimized parameters for the growth of high quality InGaAlP films on GaAs were obtained. The combination of these nondestructive techniques offers a better understanding of MOCVD-grown In0.48(Ga1−xAlx)0.52P/GaAs and a useful way to optimize the growth parameters of high quality quaternary semiconductor materials.

Liquid Phase Epitaxial Growth Of Algainpas On Gaas Substrates

Surface and Optical Properties of Algainp Films Grown on Gaas by Metalorganic Chemical Vapor Deposition

GSMBE growth and characterizations of AlInP/InGaAsP strain-compensated multiple-layer heterostructures

Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy

Growth of Gaasp by Solid Source Molecular Beam Epitaxy

Heteroepitaxy Of In0.53ga0.47as On Gaas Substrate By Low Pressure Metalorganic Chemical Vapor Deposition For The Oeic Applications

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Heteroepitaxial Growth of Inp/Gaas(100) by Metalorganic Chemical Vapor Deposition

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Nondestructive Assessment of In0.48(Ga1−xAlx)0.52P Films Grown on GaAs (001) by Low Pressure Metalorganic Chemical Vapor Deposition

Growth of AlxGa1−xP on GaAs Substrate by Metalorganic Vapor Phase Epitaxy

MOCVD growth of GaAs/AlGaAs superlattices

Growth And Characterization Of Algan/Gan Heterostructures On Semi-Insulating Gan Epilayers By Molecular Beam Epitaxy

The Effect of InGaAs/GaAs Superlattices on GaAs Epilayer Grown on Si (100) Substrate

The Study of the Growth of GaInP2 Materials on Ge Substrate

High Uniformity 6-Inch InGaP Epitaxial Growth

Growth And Characterization Of Gaxin1-Xas1-Ysby Epitaxial Layers Grown By Lp-Mocvd

High Al-content AlInGaN Epilayers with Different Thicknesses Grown on GaN/sapphire Templates

X-ray Double Crystal Diffraction and Raman Spectra Measurements of AlP/GaP Short-Period Superlattices

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Characterization at atomic scale of epitaxially grown In 0.1Ga 0.86As/GaAs(4×3) surface