Abstract:High brightness visible light emitting diodes (LEDs)based on GaAlInP/GaAs are now in great demand. In order to meet the requirements for mass production with low unit cost, metalorganic chemical vapor deposition (MOCVD) is the primary deposition process for cost effective large area and multiple wafer growth of compound semiconductors. In this work, low pressure MOCVD growth and non-destructive materials characterization on 1.00 mm (4 ") wafer size epitaxial films of quaternary GaAlInP grown on GaAs substrates for LED applications-is demonstrated. The ability to scale the deposition and fabrication process from the traditionally used 50 mm (2 ") to 100 mm (4 ") will be key in further reducing costs. MOCVD system design requires that growth to be laterally uniform, abruptly switchable, and robust against variations in process parameters that can been achieved so that production of high quality and high uniformity GaAlInP films are obtained. In parallel, to this effort there is the need to develop rapid whole wafer and non-destructive mapping characterization techniques to investigate GaAlInP material properties such as sheet resistivity, film thickness, photoluminescence (PL), Fourier transform infrared (FTIR) and Raman scattering spectra for both material (or device optimization) and for the on-going qualification of material during production. Typical unformities of GaAlInP epitaxial film thickness, sheet resistivity, major PL band peak wavelength and width are 1-3%. For techniques without automatic mapping abilities, multiple point measurements and employed to obtain information over the entire wafer. Variations of these characteristic features, such as sheet resistivity, PL and Raman properties, with different Al compositions and doping are discussed in this work.

The Study of the Growth of GaInP2 Materials on Ge Substrate

Study on the MOCVD Growth of (al) GaInP

Investigation Of Inp Epitaxial Films On Gaas Substrate Grown By Lp-Mocvd

Study on the growth of GaAs layer and InAs quantum dots on Ge substrate by molecular beam epitaxy

Growth of GaInAsSb alloys by metalorganic chemical vapor deposition

Heteroepitaxial Growth of Inp/Gaas(100) by Metalorganic Chemical Vapor Deposition

The study of InAsxSb1-x on GaSb substrate grown by LP-MOCVD

Growth and Characterisation of InAsSb Ternary Layers on (100) GaSb Substrates by LP-MOCVD

Study of GaP Single Crystal Layers Grown on GaN by MOCVD

Growth and Characterisation of InAsSb Ternary Layers on (101) GaSb Substrates by LP-MOCVD

High Uniformity 6-Inch InGaP Epitaxial Growth

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Properties of BaInP grown by MOCVD

Surface and Optical Properties of Algainp Films Grown on Gaas by Metalorganic Chemical Vapor Deposition

Nondestructive Assessment of In0.48(Ga1−xAlx)0.52P Films Grown on GaAs (001) by Low Pressure Metalorganic Chemical Vapor Deposition

Study of InGaN Films Grown by MOCVD

Heteroepitaxial Growth of InP/GaAs Using Low-Temperature InxGa1-xP Graded Buffers

Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

Influence of Ⅲ/Ⅴ Ratio on MOCVD Growth of AlGaInP

MOCVD Growth and Characterization of 100-Mm Diameter (ga 1-X Al X ) 0.5 in 0.5 P/GaAs Epitaxial Materials for LED Applications

Structural and Optical Properties of Gainp Grown on Germanium by Metal-Organic Chemical Vapor Deposition