Abstract:The In 0 5 (Ga 1- x Al x ) 0 5 P quaternary alloys has been an interesting material,because of high recombination probability,high emission efficiency, direct band gap transition and small lattice mismatch to GaAs substrate.Thus In 0 5 (Ga 1- x Al x ) 0 5 P alloys was ideal active and cladding layer material for LEDs and LDs operating in the red to green region of the visible spectrum. However,many problems plague the MOCVD growth of In 0 5 (Ga 1- x Al x ) 0 5 P,including oxygen and carbon contamination,due to the Al,the difficulties increases as the band gap energy increases. The In 0 5 (Ga 1- x Al x ) 0 5 P materials were grown on the silicon doped GaAs substrate by LP MOCVD.The metalorganic precursors were trimethylindium(TMIn),trimethylgallium(TMGa),trimethyaluminum(TMAl).The hydride source was phosphine(PH\-3).The dopant source was silane(SiH\-4) and dimethylzinc(DEZn),respectively.Al composition in In 0 5 (Ga 1- x Al x ) 0 5 P epilayer was x =0 6. To investigate the effect of the growth conditions such as temperature,dopant flow rate,Ⅴ/Ⅲ ratio,Al composion and substrate orientations on doped concentration,the growth of doped InGaAlP alloys was studied by LP MOCVD.We demonstrated that lowering temperature and reducing Al composion,increasing the flow rate of DEZn,and selecting the substrate inclining 6 to 15° from 100 to 111 are contribute to the increasing of Zn doped concentration in InGaAlP alloys. While raising temperature and increasing the flow rate of SiH\-4,reducing Al composion and Ⅴ/Ⅲ ratio are contribute to Si doped concentration,and the orientations of substrate has no effect on the latter.

Influence of Ⅲ/Ⅴ Ratio on MOCVD Growth of AlGaInP

Effects of Ⅴ/Ⅲ ratio on species diffusion anisotropy inthe MOCVD growth of non-polar a-plane GaN films

Influence of PH3 Flow Distribution on the Growth of AlInP/GaInP Distributed Bragg-reflector

The Effects of V/III Ratio on Nonpolara-Plane GaN Films Grown Onr-Plane Sapphire by MOCVD

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar α-plane GaN films

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Growth Properties of DopedIn_(0.5)(Ga_(1-x)Al_x)_(0.5)P Alloys

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

Investigation of the growth rate on optical and crystal quality of InGaAs/AlGaAs multi-quantum wells and InGaAs single layer grown by molecular beam epitaxy (MBE)

Effects of Different Ⅴ/Ⅲ Ratios on the Properties of m-Plane GaN Crystal

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

The Influence of V/III Ratio in the Initial Growth Stage on the Properties of GaN Epilayer Deposited on Low Temperature AlN Buffer Layer

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

Nuclear science and optical studies of InAlGaP materials grown on GaAs by metalorganic chemical vapor deposition

Effects of V/III Ratio on the Growth of a -Plane GaN Films

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Properties of BaInP grown by MOCVD

Liquid Phase Epitaxial Growth Of Algainpas On Gaas Substrates

Effects of Growth Temperature on Phase Transformation and Crystal Quality of Ga2O3 Films Grown on Si/AlN Composite Substrates by MOCVD