Abstract:Cubic silicon carbide (3C‐SiC) crystals are grown by the close space physical vapor transport (CS‐PVT) method while the growth temperature, pressure, and the nitrogen doping are varied during three different growth run series. The influence of the growth parameters on the step‐controlled surface morphology and stacking fault density is systematically investigated and discussed. A systematic approach to determine the most crucial growth parameters and their effect on the surface morphology and defect density of sublimation grown (001) cubic silicon carbide (3C‐SiC) is conducted. Close space physical vapor transport (CS‐PVT) growth on 3C‐SiC and 4° off oriented homoepitaxial chemical vapor deposition (CVD) grown seeding layers is performed. For each growth run, one growth parameter, e.g., temperature, pressure, or N2 flux is varied, while the other parameters are kept constant. Raman spectroscopy, potassium hydroxide (KOH) etching, as well as optical microscopy and atomic force microscopy (AFM) are used for the sample characterization. Step‐flow‐controlled growth is observed on all grown samples, while the stacking fault density is generally reduced with respect to the seeding layers. Increased temperature as well as increased pressure leads to roughening of the growth surface attributed to step bunching, while their effect on the stacking fault density seems to be only minor in the analyzed parameter range. Areas of strongly enhanced step bunching are present on all samples, and this effect is more pronounced at higher temperature and pressure. Increased nitrogen doping leads to a decreased stacking fault density but also increases the length of remaining stacking faults. The surface morphology is influenced by N2 on a macroscopic level rather than on microscopic scale.

Growth and characterization of nitrogen-doped polycrystalline 3C-SiC thin films for harsh environment MEMS applications

Temperature influence on the deposition of nitrogen-doped SiC polycrystalline films

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Residual Stress Characterization of Polycrystalline 3C-Sic Films on Si(100) Deposited from Methylsilane

Preparation of 50mm 3C-Sic/si(111) As Substrates Suited for III-Nitrides

Effect of Nitrogen and Aluminum Doping on 3C-SiC Heteroepitaxial Layers Grown on 4° Off-Axis Si (100)

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Novel Electrical Characterization of Thin 3C-Sic Films on Si Substrates

Growth and Characterization of Si/SiN/SiC Structures by APCVD Process

In Situ Doping of Nitrogen in <110>-Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Microstructure and texture of polycrystalline 3C–SiC thick films characterized via EBSD

Heteroepitaxial Growth and Characterization of 3C-Sic Films on Si Substrates Using Lpvcvd

Low-temperature PECVD of Nanodevice-Grade Nc-3C-sic

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over A-Plane SiC Substrates

Heteroepitaxial growth and characterization of 3C-SiC films on on-axis Si (1 1 0) substrates by LPCVD

Synthesis and characterization of C3N4 crystalline films on silicon

The Growth of 3C-Sic on Si Substrate Using a SiCN Buffer Layer

Optical and surface properties of 3C–SiC thin epitaxial films grown at different temperatures on 4H–SiC substrates