Design of a Sample-and-Hold Circuit for High Speed CMOS Image Sensor

CAI Kunming,DING Koubao,LUO Hao,HAN Yan
DOI: https://doi.org/10.3969/j.issn.1004-1699.2010.07.015
2010-01-01
Abstract:A sample-and-hold circuit utilized in high speed integrator array is designed. A new T type switch which can restrain the substrate biasing effect is designed to replace the traditional CMOS transmission gate switch. Thus, the linearity of the switch’s turn-on resistance can be assured because the changes of threshold voltage caused by the substrate biasing effect is limited. Also,this new T type structure can reduce the charge feed through effect under high frequency input,thus,a better turn-off isolation characteristic can be achieved . Based on SMIC 0. 13 μm Standard CMOS technique,a sample-and-hold circuit applicable to the CMOS image sensor is designed. Spectre simulation results show that the Signal-to-Noise Distortion Ratio and Spurs Free Dynamic Range is 85. 5 dB and 92. 87 dB respectively under the Nyquist input frequency,the power consumption is only 32. 8 mW.
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