Abstract:Organic electroluminescence is one of the most promising technology for next generation of flat panel display. Hole transporting layer represents the weakest link in the electroluminescent structure considering the thermal stability of the materials. The most widely used hole transporting material, N,N'-bis (1-naphthyl)-N, N'-diphenyl-1, 1'-biphenyl-4, 4'-diamine (NPB), has a glass transition temperature ( Tg) of 95℃, which is much lower than that of the electron transporting material, tris (8- hydroxyquinoline) aluminum (Alq3) . Based on the good hole transporting property and suitable energy level matched with other materials of NPB, two new hole transporting materials: N, N'-bis(1-naphthyl)- N,N'-di(4-methylphenyl)-1,1'-biphenyl-4, 4'-diamine (NTB) and N, N'-bis(1-naphthyl)-N, N'-di(4- tert-butylphenyl)-1, 1'-biphenyl-4, 4'-diamine (NBB) were synthesized by introducing methyl and tert- butyl groups into NPB to improve its thermal stability. The glass transition temperature (Tg) of NTB and NBB measured by DSC are 108℃ and 129℃ respectively, showing better thermal stability than that of NPB. The ionization energy obtained by ultraviolet photoemission spectroscopy is 5. 2eV for all of NPB and its derivatives. The emission peak in the photoluminescent spectra of the solid films of NTB and NBB are at 455nm and 460nm, which are close to the emission peak of NPB at 440nm. The organic electroluminescent devices using NPB, NTB and NBB as hole transporting layer (HTM) were fabricated with the structure of ITO/CuPc(20nm)/HTM(50nm)/Alq3(60nm)/LiF(0.5nm)/Al(100nm). The emission spectra of the three devices are the same and the green color light was emitted from the Alq3 layer. The turn-on voltages of the devices are 11, 9, 8V for NPB, NTB and NBB, respectively. The brightness of the devices at 15V are 1 000, 1 300, 1 200cd/m2 for NPB, NTB and NBB. The devices with NTB and NBB also show better longevity than that of NPB in a prelimin ary test.

PTPD/Alq3 Heterostructure Electroluminescent Diode and Its Stability

Thickness Dependent Behavior of Photoluminescence of Tris(8-hydroxyquinoline) Aluminum Film

Emission Characteristics Of Organic Light-Emitting Diodes With A Heterostructure Of Dye Doped Poly(N-Vinyl Carbazole)/Tris(8-Hydroxyquinoline) Aluminum

High Luminance and Stability of Perovskite Quantum Dot Light-Emitting Diodes Via ZnBr2 Passivation and an Ultrathin Al2O3 Barrier with Improved Carrier Balance and Ion Diffusive Inhibition

Light-Emitting Devices Based on Erbium-Doped Tio2/P(+)-Si Heterostructures: Engineering of Electroluminescence Via Aluminum Co-Doping

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

PEDOT:PSS-Free Quantum-Dot Light-Emitting Diode with Enhanced Efficiency and Stability

P-113: Novel Structure Organic Light-Emitting Diodes with High Performance

Novel phosphine oxide-based electron-transporting materials for efficient phosphorescent organic light-emitting diodes

Synthesis of Thermal Stable Organic Hole Transporting Materials for Use in Electroluminescent Devices

Electroluminescence Stability of Organic Light-Emitting Devices Utilizing a Nondoped Pt-Based Emission Layer

P-113: Society for Information Display: Novel Structure Organic Light-emitting Diodes With High Performance

Dependence of the Performance of the Organic Electroluminescent Devices Upon the Deposition Rate of Organic Thin Films

Influence of Different Hole Transport Layer on the Performance of Organic Light-Emitting Devices

Organic light-emitting diodes made with poly (N-vinylcarbazole) (PVK) and 8-hydroxyquinoline aluminium (Alq3)

Enhanced photoluminescence characteristics in Mg doped Alq3: An insight into doping mechanism

Stability of Electroluminescent Perovskite Quantum Dots Light‐emitting Diode

Electronic structure and energy level alignment of Alq3/Al2O3/Al and Alq3/Al interfaces studied by ultraviolet photoemission spectroscopy

Organic Electroluminescent Device Based on Balanced Carriers Injection and Transportation

Pure green and narrow bandwidth electroluminescence from organic light-emitting diodes

Perovskite Light-Emitting Devices with Doped Hole Transporting Layer