Improving Electron Injection of Organic Light-Emitting Transistors via Interface Layer Design
Xiangyu Tan,Qingbin Li,Zhengsheng Qin,Dan Liu,Yumin Liu,Pu Wang,Ziyi Xie,Zhagen Miao,yanan Lei,Yu Zhang,Pengsong Wang,Xianneng Chen,Zhenling Liu,Can Gao,Wenping Hu,Hao-Li Zhang,Huanli Dong
DOI: https://doi.org/10.1039/d4mh00870g
IF: 13.3
2024-10-26
Materials Horizons
Abstract:Ambipolar transport is crucial for constructing high performance organic light-emitting transistors (OLETs), but the ambipolar feature is usually not be exhibited due to the ineffective electron injection especially in symmetric device geometry. Herein, we show that electron injection could be greatly enhanced through the judicious design of an organic interface layer of 3,7-di(2-naphthyl)dibenzothiophene S,S-dioxide (DNaDBSO) which has the interfacial dipole effect in contact with metal electrode, especially Au electrode. When incorporating DNaDBSO film beneath Au electrodes, the electron injection and mobility were significantly enhanced in 2,6-diphenylanthracene-based OLETs, and thus ambipolar transport (μhmax: 2.17 cm2 V-1 s-1, μemax: 0.053 cm2 V-1 s-1) was effortlessly obtained. Further, the shift of electroluminescent region was obviously observed under modulation of gate voltage, which demonstrates efficient electron injection and intrinsic ambipolar transporting properties in devices. This study provides a new avenue for regulating the interface in electroluminescent devices towards high performance simple-structured OLETs in applications.
materials science, multidisciplinary,chemistry