The effect of carrier transport layer on the electroluminescent properties of solution‐processed thermally activated delayed fluorescent device based on 4CzPN

Lijiang Zhang,Zhaoyue Lü,Junling Wang
DOI: https://doi.org/10.1002/pssb.202200072
2022-05-13
Abstract:The performance of solution‐processed organic light‐emitting diodes (OLEDs) based on thermally activated delayed fluorescent (TADF) emitter of 3, 4, 5, 6‐tetrakis (carbazol‐9‐yl)‐1, 2‐dicyanobenzene (4CzPN) was optimized via adjusting carrier transport layer. The device with TPBi (1,3,5‐Tris(1‐phenyl‐1Hbenzimidazol‐2‐yl) benzene) as electron transport layer (ETL) demonstrates much higher efficiency compared with the device with TmPyPB (1, 3, 5‐Tri [(3‐pyridyl)‐phen‐3‐yl] benzene) as ETL. The proposed mechanism is that triplet‐charge annihilation is alleviated since less holes are accumulated at the interface between emission layer (EML) and ETL due to lower lying highest occupied molecular orbital (HOMO) of TPBi. In addition, the hole transport material of TPD (N, N'‐bis (3‐methylphenyl)‐N, N'‐bis (phenyl)‐benzidine) inserted at the PEDOT:PSS/EML interface could block electron leakage and suppress the exciton quenching by PEDOT:PSS. And thus, the device efficiency is improved. The current efficiency of 18.46 cd/A and external quantum efficiency of 5.99% are achieved for the solution‐processed 4CzPN‐based device with TPBi as ETL and TPD as hole transport layer (HTL). It is illuminated that suppressing exciton quenching via manipulating carrier behaviors in the EML is an efficient approach for fulfilling high‐performance solution‐processed TADF devices. This article is protected by copyright. All rights reserved.
physics, condensed matter
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