Control Of Carrier Transport In Organic Semiconductors By Aluminum Doping

ZhenJia Wang,Yizheng Wu,Y. C. Zhou,Jiang Zhou,S. T. Zhang,Xunmin Ding,Xiaoyuan Hou,Ziqiang Zhu
DOI: https://doi.org/10.1063/1.2208947
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Control of carrier transport in organic semiconductors by aluminum doping is realized in organic light-emitting devices (OLEDs) for which electroluminescence can sensitively reflect the status of carrier transport. It is found that an Al-doped layer with proper thickness (similar to 1-10 nm) may block hole transport completely and enhance electron transport to some extent regardless of its location in the organic carrier transport layers. Improvement in the efficiency of OLEDs with an aluminum cathode is achieved upon the introduction of a very thin (similar to 3 nm) Al-doped region near the light-emitting area. The current efficiency obtained with such Al-doped devices is about 30% higher than that with undoped devices. (c) 2006 American Institute of Physics.
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