GaAs Nanocrystals Via Hydrothermal Redox Reaction

S Wei,J Lu,WC Yu,HB Zhang,YT Qian

DOI: https://doi.org/10.1246/cl.2004.386

2004-01-01

Chemistry Letters

Abstract:GaAs nanocrystals of 35 nm were synthesized via hydrothermal redox reaction of metal gallium with As2O3 and following annealing, which were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectra. The formation mechanism was discussed.

What problem does this paper attempt to address?

A Redox Reaction to Synthesize Nanocrystalline Cu2-xSe in Aqueous Solution

WX Zhang,XM Zhang,L Zhang,JX Wu,ZH Hui,YW Cheng,JW Liu,Y Xie,YT Qian

DOI: https://doi.org/10.1021/ic990871d

IF: 4.6

2000-01-01

Inorganic Chemistry

Abstract:A redox reaction between an alkaline selenium solution and an aqueous solution of a cupric complex [Cu(edta)]2- produces nanocrystalline Cu2-xSe with an average particle size of 16.6 nm at room temperature under atmospheric pressure.
Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

X D Pi,U Kortshagen

DOI: https://doi.org/10.1088/0957-4484/20/29/295602

IF: 3.5

2009-01-01

Nanotechnology

Abstract:The composition, structure, light emission and oxidation kinetics of Si1-xGex alloy nanocrystals (similar to 3 nm in diameter) synthesized by nonthermal plasma have been investigated. It is found that the synthesized nanocrystals are neither a mixture of Si nanocrystals and Ge nanocrystals nor Si-Ge (Ge-Si) core-shell nanocrystals. The H coverage at the surface of Si1-xGex nanocrystals decreases with the increase of the Ge atomic fraction. The incorporation of Ge enhances the oxidation of Si1-xGex nanocrystals when the atomic fraction of Ge is < 0.5. No shift in photoluminescence from hydrosilylated Si1-xGex nanocrystals is observed when the atomic fraction of Ge varies between 0 and 0.1, indicating that the bandgap of Si nanocrystals is similar to that of Ge nanocrystals at a nanocrystal size of 3 nm.
Hydrothermal Route to Inas Semiconductor Nanocrystals

J Lu,S Wei,WC Yu,HB Zhang,YT Qian

DOI: https://doi.org/10.1021/ic049740p

IF: 4.6

2004-01-01

Inorganic Chemistry

Abstract:Spherical InAs nanocrystals of 30-50 nm were hydrothermally synthesized at 120degreesC, which showed a 100 meV-blueshift of band gap absorption and phonon confinement of optical vibration mode, The study of hydrothermal formation mechanism indicated that crystalline InAs could be obtained in an extended pH range (similar to-0.15 to 14).
Synthesis of One-Dimensional Chalcogenides by a Novel Hydrothermal Process

Hui Zhang,De Ren Yang,Yujie Ji,Xiang Yang Ma,Jin Xu,Duan Ling Que

DOI: https://doi.org/10.4028/www.scientific.net/SSP.99-100.203

2004-01-01

Solid State Phenomena

Abstract:A TGA assisted hydrothermal process was employed to prepare chalcogenide nanorods. The different morphology of US nanomaterials prepared with and without the TGA assisted hydrothermal process indicates that TGA plays a critical role in controlling the nucleation and growth of CdS nanomaterials. The paper makes a preliminary presentation of the mechanisms of preparation of chalcogenide nanostructures with and without the use of the TGA assisted hydrothermal synthesis. FeS nanorods and nanoparticles have been prepared by the TGA assisted and without the TGA assisted hydrothermal process, respectively, which confirmed the proposed mechanism. X-ray diffraction (XRD) shows that the nanorods are of orthorhombic structure, and selected area electron diffraction (SAED) pattern showed that the FeS nanorods were single crystalse. Further investigation for the synthesis of other chalcogenides will be undertaken in order to confirm the proposed mechanism.
Single crystalline CdS nanorods fabricated by a novel hydrothermal method

Hui Zhang,Xiangyang Ma,Yujie Ji,Jin Xu,Deren Yang

DOI: https://doi.org/10.1016/S0009-2614(03)01242-9

IF: 2.719

2003-01-01

Chemical Physics Letters

Abstract:Cadmium sulphide (CdS) nanorods have been prepared by a novel thioglycolic acid assisted hydrothermal method. X-ray diffraction shows that the nanorods are of hexagonal structure, and high-resolution transmission electron microscopy further identifies that the CdS nanorods are single crystalline in nature. The optical properties of CdS nanorods were characterized by ultraviolet–vis and photoluminescence spectra. Furthermore, the mechanism for the TGA assisted hydrothermal synthesis of CdS nanorods has been preliminary presented.
Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

J.C. Wang,D.P. Yu,C.Y. Li,J.F. Zhou,Y.Z. Wang,S.Q. Feng

DOI: https://doi.org/10.1007/s00339-002-2042-z

2004-01-01

Applied Physics A

Abstract:Large-scale synthesis of high-quality GaN nano-crystallites has been achieved by direct reaction of a 4:1 molar Ga/Ga2O3 mixture with ammonia at 950 °C. X-ray diffraction, transmission electron microscopy, selected-area electron diffraction and high-resolution transmission electron microscopy revealed that the produced GaN nanocrystallites were single hexagonal wurtzite structure with an average particle size around 45 nm. A sharp near band edge emission peak and a blue light emission peak were observed in photoluminescence spectroscopy. The synthesis approach is simple and easy to be commercialized.
Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods

Xiaohe Liu,Guanzhou Qiu,Yan Zhao,Ning Zhang,Ran Yi

DOI: https://doi.org/10.1016/j.jallcom.2006.08.062

IF: 6.2

2007-07-01

Journal of Alloys and Compounds

Abstract:Single-crystalline gallium oxide hydroxide (α-GaOOH) nanorods could be successfully synthesized in large quantities through a hydrothermal synthetic method using gallium oxide as the gallium source and sodium azide and aqueous hydrazine as both alkaline and complexing reagent. Single-crystalline gallium oxide (α-Ga2O3 and β-Ga2O3) nanorods could be selectively obtained by thermal decomposition method using gallium oxide hydroxide nanorods as the precursor. The phase structures, morphologies and properties of the final products were investigated in detail by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), selected area electron diffraction (SAED), fourier transform infrared spectra (FTIR), differential scanning calorimetric analysis (DSC), thermogravimetric analysis (TG), and photoluminescence spectra (PL).

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
Hydrothermal Synthesis and Luminescence Properties of NaGdF4:Eu3+ Crystals

Shen Huaxiang,Wang Feng,Fan Xianping

2010-01-01

Rare Metal Materials and Engineering

Abstract:Eu3+ doped NaGdF4 crystals were synthesized by hydrothermal methods. The effects of different temperatures and NaF concentration on the crystal structures and luminescence intensities were investigated. The intensity of D-5(0)-> F-7(2) transition of Eu3+ ions was closely related with the amount of GdF3 phase. The reduction of GdF3 phase could substantially enhance the ratio of D-5(0)-> F-7(2) transition and D-5(0)-> F-7(1) transition of Eu3+.
Cadmium sulfide nanocrystals via two-step hydrothermal process in microemulsions: synthesis and characterization.

Peng Zhang,Lian Gao

DOI: https://doi.org/10.1016/S0021-9797(03)00671-4

IF: 9.9

2003-01-01

Journal of Colloid and Interface Science

Abstract:CdS nanocrystals with an average diameter of 16 nm were synthesized in the CTAB/n-C5H11OH/n-C6H14/water quaternary microemulsions by a two-step hydrothermal process at 90 and 130°C. The reaction of carbamide and carbon disulfide was employed as the sulfur source for the preparation of CdS nanocrystals. The resulting crystals were characterized with powder X-ray diffraction, transmission electron microscopy, UV–vis absorption spectroscopy, and photoluminescence spectroscopy. A unique core/shell structure of CdS nanocrystals was suggested for the explanation of the interesting phenomenon.
Single-Crystalline Germanium Nanocrystals via a Two-Step Microwave-Assisted Colloidal Synthesis from GeI4

Zheng Ju,Xiao Qi,Roy Sfadia,Minyuan Wang,Emily Tseng,Elizabeth C Panchul,Sue A Carter,Susan M Kauzlarich

DOI: https://doi.org/10.1021/acsmaterialsau.1c00072

2022-02-08

Abstract:Colloidal germanium (Ge) nanocrystals (NCs) are of great interest with possible applications for photovoltaics and near-IR detectors. In many examples of colloidal reactions, Ge(II) precursors are employed, and NCs of diameter ∼3-10 nm have been prepared. Herein, we employed a two-step microwave-assisted reduction of GeI4 in oleylamine (OAm) to prepare monodispersed Ge NCs with a size of 18.9 ± 1.84 nm. More importantly, the as-synthesized Ge NCs showed high crystallinity with single-crystal nature as indicated by powder X-ray diffraction, selected area electron diffraction, and high-resolution transmission electron microscopy. The Tauc plot derived from photothermal deflection spectroscopy measurement on Ge NCs thin films shows a decreased bandgap of the Ge NCs obtained from GeI4 compared with that of the Ge NCs from GeI2 with a similar particle size, indicating a higher crystallinity of the samples prepared with the two-step reaction from GeI4. The calculated Urbach energy indicates less disorder in the larger NCs. This disorder might correlate with the fraction of surface states associated with decreased particle size or with the increased molar ratio of ligands to germanium. Solutions involved in this two-step reaction were investigated with 1H NMR spectroscopy and high-resolution mass spectrometry (MS). One possible reaction pathway is proposed to unveil the details of the reaction involving GeI4 and OAm. Overall, this two-step synthesis produces high-quality Ge NCs and provides new insight on nanoparticle synthesis of covalently bonding semiconductors.
Synthesis of Tungsten Carbide Nanocrystal Via A Simple Reductive Reaction

Chunli Guo,Yi Liu,Xiaojian Ma,Yitai Qian,Liqiang Xu

DOI: https://doi.org/10.1246/cl.2006.1210

2006-01-01

Chemistry Letters

Abstract:Tungsten carbide nanocrystal had been prepared by the simple reaction of WO3, Mg, and anhydrous CH3CH2OH in an autoclave at 600 degrees C. There were two types of tungsten carbide in the samples; one was pure WC, and the other was wrapped by carbon. Transmission electron microscopy (TEM) results revealed that the diameters of WC nanocrystals ranged from 100 to 200 nm, and that the WC nanocrystals were slightly agglomerated. The possible formation mechanism of the as-obtained tungsten carbide was discussed.
Preparation of Ge nanocrystals via ultrasonic solution reduction

H.P. Wu,J.F. Liu,Y.W. Wang,Y.W. Zeng,J.Z. Jiang

DOI: https://doi.org/10.1016/j.matlet.2005.10.063

IF: 3

2006-04-01

Materials Letters

Abstract:Germanium nanocrystals, ranging from 3 to 10 nm with a narrow size distribution, can be synthesized by an inexpensive, simple ultrasonic solution reduction method. This is based on the reduction of GeCl4 by metal hydride or alkaline in ambient condition. Effects of reduction agent, reaction condition and the concentration of GeCl4 on the formation of germanium nanocrystals were investigated. The morphology and the crystal structure of Ge nanocrystals obtained at different conditions were characterised by transmission electron microscope and selected area electron diffraction. Possible mechanisms for the formation of Ge nanocrystals were discussed.

materials science, multidisciplinary,physics, applied
Synthesis and characterization of gallium oxide nanowires via a hydrothermal method

Yu Quan,Dong Fang,Xueying Zhang,Suqin Liu,Kelong Huang

DOI: https://doi.org/10.1016/j.matchemphys.2010.01.009

IF: 4.778

2010-05-01

Materials Chemistry and Physics

Abstract:Single-crystalline gallium oxide hydroxide (GaOOH) nanowires could be successfully synthesized in large quantities through a hydrothermal synthetic method using gallium nitrate as the gallium source and sodium dodecyl benzene sulfonate as the surfactant. Gallium oxide α-Ga2O3 and β-Ga2O3 nanowires could be obtained by thermal decomposition method using gallium oxide hydroxide nanowires as the precursor. X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected-area electron diffraction (SAED), energy-dispersive X-ray (EDX) analysis, Fourier-transform infrared (FTIR) spectra, and photoluminescence (PL) were employed to characterize the resulting samples. Detailed results and possible mechanism are presented.

materials science, multidisciplinary
Low Temperature Solid-State Synthesis of Nanocrystalline Gallium Nitride

Liangbiao Wang,Liang Shi,Qianwen Li,Lulu Si,Yongchun Zhu,Yitai Qian

DOI: https://doi.org/10.1016/j.materresbull.2012.06.027

IF: 5.6

2012-01-01

Materials Research Bulletin

Abstract:Nanocrystalline gallium nitride was synthesized by a solid-state reaction of metallic magnesium powder, gallium sesquioxide and sodium amide in a stainless steel autoclave at a relatively low temperature (400–550°C). The structures and morphologies of the obtained products were derived from X-ray powder diffraction (XRD) and transmission electron microscopy (TEM). XRD patterns indicated that the products were hexagonal GaN (JCPDS card no. 76-0703). The influence of reaction temperature on size of the products was studied by XRD and TEM. Furthermore, the thermal stability and oxidation resistance of the nanocrystalline GaN were also investigated. It had good thermal stability and oxidation resistance below 800°C in air.
Microwave Hydrothermal Synthesis of Gan Nanorods

Dong Li,Fen Wang,Jianfeng Zhu,Dawei Liu,Xiaofeng Wang,Liuyi Xiang

DOI: https://doi.org/10.4028/www.scientific.net/msf.675-677.251

2011-01-01

Abstract:The GaOOH Nanocrystal rods were successfully synthesized by microwavehydrothermal method using Ga2O3 ,HNO3 and NH3·H2O as raw materials. Simple heat treatment of GaOOH in the flow of NH3 gas leads to the formation of submicron GaN rods even at 800°C through GaOOH. The resultant GaOOH and GaN nanomaterials were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The growth mechanism of GaOOH and GaN was proposed. The results indicate that the as synthesized GaN were hexagonal nanorods with average aspects ratio of 5:1(diameter 800 nm and length about 4μm). Photoluminescence spectrum shows that a blue emission peak originates at 473.5 nm, indicating that the GaN nanorods displayed luminescence emission in the blue-violet region, which was related to crystal defects, and may be helpful for electro-optical applications of GaN material.
Gallium nitride synthesis from sodium azide using iodine as a heat sink and diluent

J.Q Hu,B Deng,W.X Zhang,K.B Tang,Y.T Qian

DOI: https://doi.org/10.1016/S0009-2614(01)01393-8

IF: 2.719

2002-01-01

Chemical Physics Letters

Abstract:Nanocrystalline GaN has been synthesized from the solid-state reaction of GaI3 and NaN3 using I2 as heat sink and diluting the reactants. X-ray powder diffraction (XRD) and transmission electron microscopy (TEM) revealed that the synthesized GaN crystallized in a hexagonal crystal structure and displayed spherical particles with an average size of 30 nm. X-ray photoelectron spectra (XPS) of the powder sample of as-prepared GaN gave the surface stoichiometry of GaN0.94. Room temperature photoluminescence (PL) spectrum showed that as-prepared GaN had one broad weak emission peak at 365 nm. The influence the addition of I2 had on the formation of GaN was investigated, and a possible reaction mechanism was also discussed.
Self-Regulation Synthesis of Nanocrystalline ZnGa2O4 by Hydrothermal Reaction

Yd Li,Xf Duan,Hw Liao,Yt Qian

DOI: https://doi.org/10.1021/cm970557m

IF: 10.508

1998-01-01

Chemistry of Materials

Abstract:A self-regulation hydrothermal reaction to synthesize nanocrystalline zinc gallate (ZnGa2O4) complex oxides was proposed: The Zn2+ ion concentration and the pH value of the solution and the nucleation and growth of ZnGa2O4 were well auto-controlled under these simple hydrothermal conditions.
A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

Y Xie,YT Qian,WZ Wang,SY Zhang,YH Zhang

DOI: https://doi.org/10.1126/science.272.5270.1926

IF: 56.9

1996-01-01

Science

Abstract:A thermal reaction of Li 3 N and GaCl 3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280°C. This temperature is much lower than that of traditional methods, and the yield of GaN reached 80%. The x-ray powder diffraction pattern indicated that sample was mainly hexagonal-phase GaN with a small fraction of rocksalt-phase GaN, which has a lattice constant a = 4.100 angstroms. This rocksalt structure, which had been observed previously only under high pressure (at least 37 gigapascals) was observed directly with high-resolution electron microscopy.
Annealing induced surface restructuring in hydrothermally synthesized gallium oxide nano-cuboids

Siddhartha Suman,Nagaraju Mukurala,Ajay K. Kushwaha

DOI: https://doi.org/10.1016/j.jcrysgro.2020.125946

IF: 1.8

2021-01-01

Journal of Crystal Growth

Abstract:Gallium Oxide (Ga2O3) nanostructures are synthesized using a hydrothermal approach and the effect of different gallium precursors on the morphology of gallium nanostructures is studied. The rice-like nanostructures are obtained in gallium chloride and gallium nitrate precursors, whereas nano-cuboids are formed in the case of gallium acetylacetonate. The size of the edge defined nano-cuboid is in the range of 0.6μm × 0.3μm × 0.2μm. The as-synthesized nano-cuboids are in the metastable phase "α" and converts to a stable "β" phase after annealed at a higher temperature (∼ 850°C). Post synthesis thermal annealing also results in the creation of nanopores on the surface of these nano-cuboids. Pores size increases with an increase in annealing temperature till 950°C, further increase in annealing temperature reduces the size of pores and a smoother surface appeared. The annealing induced surface restructuring offers significant alteration on nano-cuboid properties that could be beneficial for surface-related applications.

materials science, multidisciplinary,physics, applied,crystallography
Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation

Zhu Jane G.,White C. W.,Budai J. D.,Withrow S. P.,Chen Y.

DOI: https://doi.org/10.1557/proc-358-175

1994-01-01

Abstract:ABSTRACTNanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO2 Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO2.

GaAs Nanocrystals Via Hydrothermal Redox Reaction

A Redox Reaction to Synthesize Nanocrystalline Cu2-xSe in Aqueous Solution

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

Hydrothermal Route to Inas Semiconductor Nanocrystals

Synthesis of One-Dimensional Chalcogenides by a Novel Hydrothermal Process

Single crystalline CdS nanorods fabricated by a novel hydrothermal method

Large-scale Synthesis of Single-Phase, High-Quality GaN Nanocrystallites

Gallium oxide nanorods by the conversion of gallium oxide hydroxide nanorods

Hydrothermal Synthesis and Luminescence Properties of NaGdF4:Eu3+ Crystals

Cadmium sulfide nanocrystals via two-step hydrothermal process in microemulsions: synthesis and characterization.

Single-Crystalline Germanium Nanocrystals via a Two-Step Microwave-Assisted Colloidal Synthesis from GeI4

Synthesis of Tungsten Carbide Nanocrystal Via A Simple Reductive Reaction

Preparation of Ge nanocrystals via ultrasonic solution reduction

Synthesis and characterization of gallium oxide nanowires via a hydrothermal method

Low Temperature Solid-State Synthesis of Nanocrystalline Gallium Nitride

Microwave Hydrothermal Synthesis of Gan Nanorods

Gallium nitride synthesis from sodium azide using iodine as a heat sink and diluent

Self-Regulation Synthesis of Nanocrystalline ZnGa2O4 by Hydrothermal Reaction

A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

Annealing induced surface restructuring in hydrothermally synthesized gallium oxide nano-cuboids

Semiconductor Nanocrystals Formed in SiO2 by Ion Implantation