Microstructural evolution and characterization of interfacial phases in diffusion-bonded SiC/Ta–5W/SiC joints
Huaxin Li,Weijian Shen,Yanming He,Zhihong Zhong,Wenjian Zheng,Yinghe Ma,Jianguo Yang,Yucheng Wu
DOI: https://doi.org/10.1016/j.ceramint.2020.06.028
IF: 5.532
2020-10-01
Ceramics International
Abstract:<p>The evolution of reaction phases formed in diffusion-bonded SiC/Ta–5W/SiC joints was investigated at a joining temperature of 1500–1700 °C for 10–90 min. The effects of bonding temperature and holding time on the phase evolution were found to be directly correlated with the thickness of the interfacial reaction layer when a 100-μm-thick Ta–5W interlayer was used for joining. In the case of a ~7-μm-thick reaction layer, the interfacial phase constitution consisted of a layered SiC/(Ta,W)C/(Ta,W)<sub>5</sub>Si<sub>3</sub>/(Ta,W)<sub>2</sub>Si/(Ta,W)<sub>x</sub>Si<sub>y</sub>/Ta–5W structure. In the reaction layer with a thickness of ~11–26 μm, the interfacial structure evolved into SiC/(Ta,W)C/(Ta,W)<sub>5</sub>Si<sub>3</sub>/(Ta,W)C/(Ta,W)<sub>x</sub>Si<sub>y</sub>/(Ta,W)<sub>2</sub>Si/(Ta,W)<sub>x</sub>Si<sub>y</sub>/Ta–5W, in which an additional (Ta,W)C/(Ta,W)<sub>x</sub>Si<sub>y</sub> layer was inserted between (Ta,W)<sub>5</sub>Si<sub>3</sub> and (Ta,W)<sub>x</sub>Si<sub>y</sub> owing to the precipitation of carbon from the (Ta,W)<sub>5</sub>Si<sub>3</sub> layer. When the Ta–5W interlayer was fully consumed to form a stable reaction product, namely the equilibrium state, (Ta,W)<sub>x</sub>Si<sub>y</sub> and (Ta,W)<sub>2</sub>Si were eventually transformed into (Ta,W)<sub>5</sub>Si<sub>3</sub>, and the final interface structure that was obtained was SiC/(Ta,W)C/(Ta,W)<sub>5</sub>Si<sub>3</sub>/(Ta,W)C/(Ta,W)<sub>5</sub>Si<sub>3</sub>/(Ta,W)C. This achievement will benefit the design, control, and characterization of SiC/metal interfaces.</p>
materials science, ceramics