Abstract:Hf-aluminate (Hf-Al-O) films have been deposited directly oil n-type Si (100) substrates and Pt-coated Si substrates using the pulsed laser deposition technique with a ceramic Hf-Al-O target, respectively. The structure and electrical properties of Hf-Al-O films have been investigated by x-ray diffraction, differential thermal analysis, x-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) and leakage current-voltage (J-V) measurements. The composition of films was determined as Hf1.00Al2.01O4.92, which is nearly the same as the HfO2 : Al2O3 composition from XPS detection. The amorphous structure of Hf-Al-O films remains stable up to 900 degreesC. A crystallization transformation from an amorphous phase to a polycrystalline tetragonal structure occurs with rapid thermal annealing for 3 min at 1000 degreesC. A thin interfacial layer in Hf-Al-O/n-Si was identified as a mixed compound of Hf-Al-Si-O. The amorphous Hf-Al-O film exhibits a high dielectric constant of about 16.6, determined by measuring a Pt/Hf-Al-O/Pt capacitor structure. A very small equivalent oxide thickness of 0.74 nm for a 3 min Hf-Al-O film on an n-Si substrate and a leakage current of 0.17 A cm(-2) at a 1 V gate voltage were obtained. Hf-aluminate films with high thermal stability and good electrical properties can be one of the most promising candidates for high-k gate dielectric applications.

The Properties of High-K Gate Dielectric Films Deposited on HRSOI

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

The Effect of Blocking Layer of Al2o3 on Thermal Stability and Electrical Properties of Hfo2 Dielectric Films Deposited on Sige Layer

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

Effects of Al2O3 on Thermal Stability and Electrical Reliability of HfO2 Film on Strained SiGe

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Baking-Temperature-Modulated Optical and Electrical Properties of Hftiox Gate Dielectrics Via Sol-Gel Method

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Study of Hfsio Film Prepared by Electron Beam Evaporation for High-K Gate Dielectric Applications

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Characteristics of Sandwich-Structured Al2O3/HfO2/Al2O3 Gate Dielectric Films on Ultra-Thin Silicon-on-insulator Substrates

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Comparative Study of Pulsed Laser Deposited HfO 2 and Hf–aluminate Films for High- K Gate Dielectric Applications

Interfacial Structures and Electrical Properties of Hfal2o5 Gate Dielectric Film Annealed with A Ti Capping Layer

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Study on Electrical Characteristics of High-K HfO2 Gate Dielectric Films

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method