Abstract:We investigated the effect of nitrogen-hydrogen (NH) mixed plasma pretreatment of 4H-SiC surfaces on SiC surface properties, SiO2/SiC interface quality, and the reliability and voltage stability of metal-oxide-semiconductor (MOS) capacitors. The NH plasma pretreatment decreased the incomplete oxide and contaminants on the SiC surface and reduced the density of SiO2/SiC interface traps. Compared with the untreated sample, the dielectric insulating characteristics and reliability of samples pretreated by NH plasma were improved. We also demonstrated that the shift/hysteresis of the flat band voltage (Vfb) and the midgap voltage (Vmg) induced by bias temperature stress for SiC MOS capacitors after NH plasma pretreatment was significantly decreased. Furthermore, the mechanisms of NH plasma pretreatment to improve interface properties and device performances were determined by combining secondary ion mass spectrometry (SIMS) measurements, X-ray photoelectron spectroscopy (XPS), and first-principles calculations. The result indicates that the excessive oxidation at the SiO2/SiC interface was limited due to the reduction in the diffusion of oxygen atoms into SiC caused by the surface Si-H and Si-N; NH plasma pretreatment suppressed the generation of interfacial traps by reducing surface pollutants and passivating surface defects, and some N atoms introduced into the SiO2/SiC interface effectively passivated the interfacial electroactive traps.

Improved Reliability of Ge MOS Capacitor with HfTiON High-K Dielelctric by Using Ge Surface Pretreatment in Wet NO

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

Hfo2/Geoxny/Ge Gate Stacks with Sub-Nanometer Capacitance Equivalent Thickness and Low Interface Trap Density by in Situ Nh3 Plasma Pretreatment

Impact of NaOH solution surface treatment on Al2O3/β-Ga2O3 MOS capacitors

Atomic Layer Deposition of HfO2 Gate Dielectric with Surface Treatments and Post-metallization Annealing for Germanium MOSFETs

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Novel Sn-assisted nitridation of Ge/HfO2 interface and improved electrical properties of the MOS capacitor

Reduction in Interface Trap Density of Al2O3/SiGe Gate Stack by Electron Cyclotron Resonance Plasma Post-nitridation

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

Ultrathin Geoxny Interlayer Formed By In Situ Nh3 Plasma Pretreatment For Passivation Of Germanium Metal-Oxide-Semiconductor Devices

Low temperature (210 °C) fabrication of Ge MOS capacitor and controllability of its flatband voltage

High-Performance Ge MOS Capacitors by $\hbox{o}_{2}$ Plasma Passivation and $\hbox{o}_{2}$ Ambient Annealing