Integration of Organic Insulator and Self-Assembled Gold Nanoparticles on Si MOSFET for Novel Non-Volatile Memory Cells

S Kolliopoulou,P Dimitrakis,P Normand,HL Zhang,N Cant,SD Evans,S Paul,C Pearson,A Molloy,MC Petty,D Tsoukalas
DOI: https://doi.org/10.1016/j.mee.2004.03.042
IF: 2.3
2004-01-01
Microelectronic Engineering
Abstract:We have fabricated a hybrid non-volatile gold nanoparticle floating-gate memory metal insulator semiconductor field effect transistor (MISFET) device combining silicon technology and organic thin film deposition. The nanoparticles are deposited by chemical processes at room temperature over a 5 nm thermal silicon dioxide layer. A multi-layer organic insulator (cadmium arachidate) deposited by the Langmuir–Blodgett technique at room temperature covers the nanoparticle layer and separates it from an Al gate electrode. Charge injection/rejection into the nanoparticles takes place by applying different voltage pulses (less than ±6 V) to the gate electrode, resulting in significant threshold-voltage shift. Charge retention measurements reveal that the device has non-volatile behavior.
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