A Single Event Upset Tolerant Latch with Parallel Nodes.
Changyong Liu,Nianlong Liu,Zhiting Lin,Xiulong Wu,Chunyu Peng,Qiang Zhao,Xuan Li,Junning Chen,Xuan Zeng,Xiangdong Hu
DOI: https://doi.org/10.1587/elex.16.20190208
2019-01-01
IEICE Electronics Express
Abstract:A single event upset (SEU) tolerant latch has been put forward in the current paper. By means of the parallel nodes structure design together with the layout-level optimization design, the proposed design is capable of substantially improving the immunity to SEU. In comparison with the conventional latch, the stacked latch with isolation and the dual-modular-redundancy (DMR) latch with C-element, the simulation results based on the 65 nm CMOS process demonstrate that the proposed latch performs much better in SEU mitigation. For P-hit simulation, the proposed latch can achieve a correct output in the end, no matter the struck PMOS is at OFF state or ON state. For N-hit simulation, the proposed latch is also capable of mitigating the voltage transient and recovering to original state eventually.