Abstract:InAs quantum dots (QD) made by self-assembled growth naturally have a random spatial and large spectral distribution. However the spatial and spectral profile of an optical cavity mode are highly predictable. To achieve the maximum interaction of single QD spontaneous emission (SE) with a cavity mode, QDs should ideally be spatially located in the cavity mode, but well isolated from nearby nonradiative surface recombination. To solve this issue, we have developed a patterned regrowth technique to place QDs near the antinode of a cavity mode. We show that the regrowth process does not affect the QDs optical properties while maintaining reasonable cavity quality factors. The PL signature of our QDs is discussed. We identify the single excitons, charged excitons and bi-excitions. Their relative intensities are decided by the excessive energy of free carriers and tunable by the sample temperature. In our research, we see strong evidence of disk sizing effect, which provide additional method to control the QD density besides material deposition and growth temperature. With this additional tunability, the QD density can be adjusted to produce low numbers of QDs (1 similar to 3 dots) per disk, so the optimal coupling of a single QD with a single cavity mode is quite plausible.

Structural and Infrared Absorption Properties of Self-Organized InGaAs/GaAs Quantum Dots Multilayers

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Photoluminescence of InAs Self-Organized Quantum Dots on (001)inp Substrate with GaAs Interlayer

Morphological and optical characterization of self-assembled InAlGaAs/GaAs quantum dots

InAs/AlxGa1−xAs Quantum Dot Infrared Photodetectors with Undoped Active Region

Characteristic Study of Inas Self-Assembled Quantum Dots on Gaas/Inp

Polarization Dependence of Intraband Absorption in Self-Organized Quantum Dots

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Photovoltage and Photoreflectance Spectroscopy of Inas/Gaas Self-Organized Quantum Dots

InAs Quantum Dots for Quantum Information Processing

Enhanced Intraband Stark Effects in Stacked Inas/Gaas Self-Assembled Quantum Dots

Intersubband Absorption In Cdse/Znxcdymg1-X-Yse Self-Assembled Quantum Dot Multilayers

InAs Self-Assembled Quantum Dots on GaAs/InP by Low-Pressure Metal-Organic Chemical Vapour Deposition

Optical And Electrical Investigation Of Low Dimensional Self-Assembled Inas Quantum Dot Field Effect Transistors

Electronic and Structural Properties of Interdiffused Self-Assembled Quantum Dots from Magneto-Photoluminescence

A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots

Long-Wave Infrared Sub-Monolayer Quantum dot Quantum Cascade Photodetector

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Ultrasmall In(Ga)As Quantum Dots Grown on Strained GaxIn1-xP Layers

Study Of Self-Assembled Ge Quantum Dot Infrared Photodetectors