Abstract:Recently, lattice-matched Zn 0.46 Cd 0.54 Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 µm to a few tens of µm. In this work, two heavily doped n-Zn 0.46 Cd 0.54 Se/Zn 0.24 Cd 0.25 Mg 0.51 Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ~ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ~ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 µm and 5.35 µm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3–5 µm range, which is of great interest for the infrared photodetector applications.

Intersubband Absorption In Cdse/Znxcdymg1-X-Yse Self-Assembled Quantum Dot Multilayers

Midinfrared Intersubband Absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se Multiple Quantum Well Structures

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

Study of intersubband transitions of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se Multi‐quantum Well Structures for Intersubband Devices Grown by MBE

Structural and Infrared Absorption Properties of Self-Organized InGaAs/GaAs Quantum Dots Multilayers

Optical Properties of Heavily Doped N-Type CdSe Quantum Dots for Intersubband Device Applications

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

CdSe Self-Assembled Quantum Dots with ZnCdMgSe Barriers Emitting Throughout the Visible Spectrum

Formation and optical properties of stacked CdSe self-assembled quantum dots on Zn[sub x]Cd[sub y]Mg[sub 1−x−y]Se barriers

Observation of In‐plane Polarized Intersublevel Absorption in Strongly Coupled InGaAs/GaAs Self Assembled Quantum Dots

Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emitters

PROPERTIES AND TURNING OF INTRABAND OPTICAL ABSORPTION IN <font>In</font><sub>x</sub><font>Ga</font><sub>1-x</sub><font>As/GaAs</font> SELF-ASSEMBLED QUANTUM DOT SUPERLATTICE

Multi-Color Infrared Sensing with Superlattice Quantum Dot Structures and Absorption Enhancements

Atomic Ordering in Self-Assembled Epitaxial Ii-Vi and Iv-Vi Compound Semiconductor Quantum Dot Systems

Intraband Absorption in the 8–12 Μm Band from Si-doped Vertically Aligned InGaAs/GaAs Quantum-Dot Superlattice

Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots

Optical Study of Strongly Coupled Cdse Quantum Dots

Intersubband absorption in boron-doped multiple Ge quantum dots

Metal–Semiconductor-Metal Structure Enhanced Quantum Dot Infrared Photodetector for Near-Infrared

Modulation of High-Intensity Optical Properties in CdS/CdSe/CdS Spherical Quantum Wells by CdSe Layer Thickness