Abstract:Recently, lattice-matched Zn 0.46 Cd 0.54 Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 µm to a few tens of µm. In this work, two heavily doped n-Zn 0.46 Cd 0.54 Se/Zn 0.24 Cd 0.25 Mg 0.51 Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ~ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ~ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 µm and 5.35 µm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3–5 µm range, which is of great interest for the infrared photodetector applications.

Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

Study of intersubband transitions of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

Midinfrared Intersubband Absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se Multiple Quantum Well Structures

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se Multi‐quantum Well Structures for Intersubband Devices Grown by MBE

Intersubband Absorption In Cdse/Znxcdymg1-X-Yse Self-Assembled Quantum Dot Multilayers

Optical Characterization and Evaluation of the Conduction Band Offset for ZnCdSe∕ZnMgSe Quantum Wells Grown on InP(001) by Molecular-Beam Epitaxy

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

Measurements of Refractive-Indexes of Ii-Vi Wide Gap Semiconductor Strained-Layer Superlattices

Emerging II-VI Wide Bandgap Semiconductor Device Technologies

Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Band Gaps, Effective Masses and Refractive Indices of Pbsrse Thin Films: Key Properties for Mid-Infrared Optoelectronic Device Applications

UV Laser Induced Selective-Area Bandgap Engineering for Fabrication of InGaAsP/InP Laser Devices

Contactless Electroreflectance Studies of II–VI Nanostructures Grown by Molecular Beam Epitaxy

The optical and spectroscopic properties of II–VI wide-gap ZnSe/ZnS and ZnSe/ZnTe strained-layer superlattices

Infrared Optical Absorbance of Intersubband Transitions in GaN/AlGaN Multiple Quantum Well Structures

Intersubband transitions in Al0.82In0.18N/GaN single quantum well

Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a ZnxCd1−xSe/Znx′Cdy′Mg1−x′−y′Se asymmetric coupled quantum well structure for quantum cascade laser application

II-VI / III-V Strained-Layer Superlattice Materials and Devices

Size and temperature dependent intraband optical studies of heavily n-doped PbS quantum dot solids

The direct-to-indirect band gap crossover in two-dimensional van der Waals Indium Selenide crystals