Abstract:Recently, lattice-matched Zn 0.46 Cd 0.54 Se/ZnCdMgSe multiple-quantum-wells (MQWs) have been recognized as very promising materials to fabricate intersubband (ISB) devices such as quantum cascade lasers and mid-infrared photoconductors. These structures have important applications in biological and chemical detections. The ISB transition covers a wide mid-infrared wavelength range from 1.3 µm to a few tens of µm. In this work, two heavily doped n-Zn 0.46 Cd 0.54 Se/Zn 0.24 Cd 0.25 Mg 0.51 Se MQW structures have been grown on InP (001) substrate by molecular beam epitaxy. Temperature dependent steady-state photoluminescence (SSPL), temperature dependent time- resolved photoluminescence (TRPL), and Fourier transform infrared spectroscopy (FTIR) were performed to characterize their interband and ISB properties. These two MQW samples have similar structures except different well widths and different number of periods. The integrated SSPL intensities and the PL decay times of the MQWs were measured as functions of temperature in the range from 77 K to 290 K. The luminescence efficiency of the sample with 28 Å well width is larger than that of the sample with 42 Å well width although both samples exhibit similar temperature dependence of PL intensity. Time-resolved PL measurements show that the PL decay times of both samples decrease with increasing temperature. From 77 K to 290 K, the decay time of the sample with 28 Å well width is in the range of 440 ps ~ 120 ps and is much longer than that of the sample with 42 Å well width, which is in the range of 65 ps ~ 25 ps. Strong non-radiative recombinations dominate the luminescence behavior of the wider MQWs. Intersubband absorption spectra of the samples were measured by FTIR and show peak absorption at wavelengths of 3.99 µm and 5.35 µm for the MQWs with well widths of 28 Å and 42 Å, respectively, falling within the 3–5 µm range, which is of great interest for the infrared photodetector applications.

ZnxCd1–xSe/Znx′Cdy′Mg1–x′–y′Se Multi‐quantum Well Structures for Intersubband Devices Grown by MBE

Optical Properties of Zn0.46Cd0.54Se/Zn0.24Cd0.25Mg0.51Se Multiple Quantum Wells for Infrared Photodetector Applications

Midinfrared Intersubband Absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se Multiple Quantum Well Structures

Study of intersubband transitions of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Optical Characterization and Evaluation of the Conduction Band Offset for ZnCdSe∕ZnMgSe Quantum Wells Grown on InP(001) by Molecular-Beam Epitaxy

Radiative and Nonradiative Recombination Processes in ZnCdSe∕ZnCdMgSe Multi-Quantum-wells

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Intersubband transitions in molecular-beam-epitaxy-grown wide band gap II-VI semiconductors

Photoreflectance and Fourier transform infrared spectroscopy study of intersubband transitions of a ZnxCd1−xSe/Znx′Cdy′Mg1−x′−y′Se asymmetric coupled quantum well structure for quantum cascade laser application

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

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Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Molecular Beam Epitaxial Growth of IV–VI Multiple Quantum Well Structures on Si(111) and BaF2(111) and Optical Studies of Epilayer Heating

High-efficiency GeSn/Ge Multiple-Quantum-well Photodetectors with Photon-Trapping Microstructures Operating at 2 Μm.

Depth-dependent Photoluminescence Characteristic of GeSn/SiGeSn Multi-Quantum Wells

Modulation of High-Intensity Optical Properties in CdS/CdSe/CdS Spherical Quantum Wells by CdSe Layer Thickness

Intersubband Absorption In Cdse/Znxcdymg1-X-Yse Self-Assembled Quantum Dot Multilayers