Abstract:Low-temperature (LT) grown GaAs in either an as-grown or annealed condition has been used as a gate dielectric for GaAs field effect transistors (FET). It was found that both types of LT GaAs layers can effectively passivate the device surface states, eliminate hysteresis and light induced effects, and dramatically increase the breakdown voltage, V-BD, between source and drain contacts of the FETs. V-BD was found to increase on cooling the as-grown LT GaAs FET with a low activation energy, typically similar to 0.15 eV for the corresponding reverse bias gate current. However, for the annealed LT GaAs FET, V-BD decreased with decreasing temperature and the fixed reverse bias gate current showed a large activation energy similar to 0.5 eV. A large gate-lag and kink effect was observed from the annealed LT GaAs FETs, but was insignificant for the as-grown LT GaAs FETs. The superior performance of the as-grown LT GaAs FETs is attributed to the high degree of hopping conductivity found, and the high breakdown characteristic of the as-grown LT GaAs. The high density of defects and the trap-like nature of the As/GaAs clusters in annealed LT GaAs layer are believed to be responsible for the transient behaviour and large values of activation energy found in the annealed LT GaAs FETs.

Capacitance behavior of GaAs-MIS structures with low-temperature grown GaAs dielectric

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

LT-GaAs with high breakdown strength at low temperature for power MISFET applications

Low-temperature Grown GaAs Insulators for GaAs FET Applications

Interface Properties of Si3N4Si/n-GaAs Metal-Msulator-semiconductor Structure Using a Si Interlayer

The Electrical Breakdown Properties of Gaas-Layers Grown by Molecular-Beam Epitaxy at Low-Temperature

Electrical Characterization Of Gaas-Layers Grown By Molecular-Beam Epitaxy At Low-Temperature

Characteristics of Si3n4/Si/N-Gaas Metal-Insulator-Semiconductor Interfaces Grown on Gaas(111)B Substrate

Metal–insulator–semiconductor Structure on GaAs Using a Pseudomorphic Si/GaP Interlayer

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Metal-Insulator-Semiconductor Structures on P-Type Gaas with Low Interface State Density

Room Temperature Si Δ-Growth on Ge Incorporating High-K Dielectric for Metal Oxide Semiconductor Applications

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics

Capacitance-voltage characteristics of a metal-carbon-silicon structure

LPMOVPE grown GaAs:C films

Physical and electrical properties of a Si 3 N 4 Õ Si Õ GaAs metal – insulator – semiconductor structure

Improvement of the Breakdown Voltage of Gaas-Fets Using Low-Temperature-Grown Gaas Insulator

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures