Abstract:Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) are regarded as promising materials for next-generation logic circuits. Top gate field-effect transistors (FETs) have independent gate control ability and can be fabricated directly on TMDC materials without a transfer process. Therefore, it has the merits of device reliability and complementary metal-oxide semiconductor (CMOS) process compatibility, which are demanded in practical circuit-level integration. However, the fabrication of the top gate FET involves depositing an insulating dielectric layer and a gate electrode in sequence on the TMDC channel material, which may affect the device performance. Insightfully investigating the influences of different top-gate-deposition methods on the electrical properties of the TMDC channel and further harnessing these influences to realize a homogeneous CMOS device on an identical 2D TMDC platform are with practice significance. In this work, p/n-type controllable top gate FET arrays based on 2H-MoTe2 are fabricated by using different top-gate-deposition methods. The electron-beam evaporation (EBE) of top metal gate exhibits an obvious n-doping effect on the 2H-MoTe2 channel and converts it from p-type to n-type, whereas the thermal evaporation of top gate affects little to the channel. High-resolution transmission electron microscopy (HR-TEM) analysis reveals that the high-energy metal atoms from the EBE process can penetrate through the 30 nm gate dielectric layers (including 10 nm Al2O3 seeding layer), leading to multiple atomic defects in both MoTe2 and the interface between MoTe2 and Al2O3. Furthermore, by utilizing the top gate engineering, a large-scale double-top-gate MoTe2 homogeneous CMOS inverter array is fabricated. The CMOS inverters exhibit clear logic swing, negligible hysteresis, and high device yield (∼93%), indicating high device reliability and stability. Notably, the fabrication process is facile, free from transfer procedure, and compatible with traditional silicon technology. This work promotes the application of 2D TMDCs in nanoelectronics integration.

Single flake homo p–n diode of MoTe 2 enabled by oxygen plasma doping

The non-volatile electrostatic doping effect in MoTe2 field-effect transistors controlled by hexagonal boron nitride and a metal gate

MoTe2 P–n Homojunctions Defined by Ferroelectric Polarization

Homogeneous 2D MoTe2 CMOS Inverters and P-N Junctions Formed by Laser-Irradiation-Induced P-Type Doping.

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Lateral and Vertical p–n Homojunctions Formed in Few-Layer MoTe 2 with In Surface Charge-Transfer Doping

High-Performance Complementary Circuits from Two-Dimensional MoTe 2

Fabricating In-Plane MoTe2 P-N Homojunction Photodetector Using Laser-Induced P-Type Doping

Implementing Lateral MoSe 2 P-N Homojunction by Efficient Carrier-Type Modulation.

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Gate-tunable carbon nanotube-MoS2 heterojunction p-n diode

Nonvolatile and Programmable Photodoping in MoTe 2 for Photoresist-Free Complementary Electronic Devices.

P-type polar transition of chemically doped multilayer MoS2 transistor

Modulation of Electrical Properties with Controllable Local Doping in Multilayer MoTe 2 Transistors

P/N-Type Conversion of 2D MoTe2 Controlled by Top Gate Engineering for Logic Circuits

Dielectric engineering enable to lateral anti-ambipolar MoTe 2 heterojunction

Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors

Substitutionally Doped MoSe2 for High-Performance Electronics and Optoelectronics.