Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Synthesis of ammonium silicon fluoride cryptocrystals on silicon by dry etching

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Etching mechanism of amorphous hydrogenated silicon nitride by hydrogen fluoride

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Layer-thickness-dependent Formation of Si-nanocrystals Embedded in Amorphous Si/SiO2 Multilayers

Femtosecond Laser-Induced Crystallization of Amorphous Silicon Thin Films under a Thin Molybdenum Layer

The Synthesization of Si Nanocrystals Embedded in HfO2 Matrix by Electron Beam Co-Evaporation Technique

Fractal growth of amorphous silicon crystallization induced by aluminum

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

Synthesis and Characterization of Crystalline Films on Silicon

Synthesis of high quality crystalline C-N films on silicon

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Precipitation and Crystallization of Nanometer Si Clusters in Annealed Si-Rich Sio2 Films

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Modeling of Silicon-Nanocrystal Formation in Amorphous Silicon/Silicon Dioxide Multilayer Structure

Synthesis of alpha-Si3N4 whiskers or equiaxed particles from amorphous Si3N4 powders

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface

KrF Laser-Induced Nanometer Si Crystallites Formation and Tem Observation